TY - JOUR
T1 - Raman studies in CdS thin films in the evolution from cubic to hexagonal phase
AU - Zelaya-Angel, O.
AU - Castillo-Alvarado, F. D.L.
AU - Avendaño-López, J.
AU - Escamilla-Esquivel, A.
AU - Contreras-Puente, G.
AU - Lozada-Morales, R.
AU - Torres-Delgado, G.
N1 - Funding Information:
Acknowledgement-This work was partially supported by CONACyT-MCxico.
PY - 1997/10
Y1 - 1997/10
N2 - CdS polycrystalline thin films prepared onto glass substrates by the chemical bath deposition method at 80°C showed cubic crystalline structure (β-CdS). Upon thermal annealing in Ar + S2 flux at different temperatures in the range 200-510°C, the crystalline structure evolution of layers from the cubic modification (as-grown sample) to hexagonal phase (annealed at highest temperature samples) has been observed. At around 300°C the critical point of the phase transition has been experimentally determined to occur. Raman spectroscopy measurements were carried out at room temperature for as-grown and annealed layers. The A1(LO)-+ E1(LO) modes at 305 cm-1 and replicas appear for as-grown and annealed samples. The E1(TO) and the A1(TO) modes were also observed. A classic simple approach is proposed in order to explain the presence of the TO modes.
AB - CdS polycrystalline thin films prepared onto glass substrates by the chemical bath deposition method at 80°C showed cubic crystalline structure (β-CdS). Upon thermal annealing in Ar + S2 flux at different temperatures in the range 200-510°C, the crystalline structure evolution of layers from the cubic modification (as-grown sample) to hexagonal phase (annealed at highest temperature samples) has been observed. At around 300°C the critical point of the phase transition has been experimentally determined to occur. Raman spectroscopy measurements were carried out at room temperature for as-grown and annealed layers. The A1(LO)-+ E1(LO) modes at 305 cm-1 and replicas appear for as-grown and annealed samples. The E1(TO) and the A1(TO) modes were also observed. A classic simple approach is proposed in order to explain the presence of the TO modes.
KW - A. Semiconductors
KW - A. Thin films
KW - D. Phase transitions
KW - D. Phonons
UR - http://www.scopus.com/inward/record.url?scp=0031259273&partnerID=8YFLogxK
U2 - 10.1016/S0038-1098(97)00080-X
DO - 10.1016/S0038-1098(97)00080-X
M3 - Artículo
AN - SCOPUS:0031259273
SN - 0038-1098
VL - 104
SP - 161
EP - 166
JO - Solid State Communications
JF - Solid State Communications
IS - 3
ER -