Raman studies in CdS thin films in the evolution from cubic to hexagonal phase

O. Zelaya-Angel, F. D.L. Castillo-Alvarado, J. Avendaño-López, A. Escamilla-Esquivel, G. Contreras-Puente, R. Lozada-Morales, G. Torres-Delgado

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

83 Citas (Scopus)

Resumen

CdS polycrystalline thin films prepared onto glass substrates by the chemical bath deposition method at 80°C showed cubic crystalline structure (β-CdS). Upon thermal annealing in Ar + S2 flux at different temperatures in the range 200-510°C, the crystalline structure evolution of layers from the cubic modification (as-grown sample) to hexagonal phase (annealed at highest temperature samples) has been observed. At around 300°C the critical point of the phase transition has been experimentally determined to occur. Raman spectroscopy measurements were carried out at room temperature for as-grown and annealed layers. The A1(LO)-+ E1(LO) modes at 305 cm-1 and replicas appear for as-grown and annealed samples. The E1(TO) and the A1(TO) modes were also observed. A classic simple approach is proposed in order to explain the presence of the TO modes.

Idioma originalInglés
Páginas (desde-hasta)161-166
Número de páginas6
PublicaciónSolid State Communications
Volumen104
N.º3
DOI
EstadoPublicada - oct. 1997

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