Raman studies in CdS thin films in the evolution from cubic to hexagonal phase

O. Zelaya-Angel, F. D.L. Castillo-Alvarado, J. Avendaño-López, A. Escamilla-Esquivel, G. Contreras-Puente, R. Lozada-Morales, G. Torres-Delgado

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Abstract

CdS polycrystalline thin films prepared onto glass substrates by the chemical bath deposition method at 80°C showed cubic crystalline structure (β-CdS). Upon thermal annealing in Ar + S2 flux at different temperatures in the range 200-510°C, the crystalline structure evolution of layers from the cubic modification (as-grown sample) to hexagonal phase (annealed at highest temperature samples) has been observed. At around 300°C the critical point of the phase transition has been experimentally determined to occur. Raman spectroscopy measurements were carried out at room temperature for as-grown and annealed layers. The A1(LO)-+ E1(LO) modes at 305 cm-1 and replicas appear for as-grown and annealed samples. The E1(TO) and the A1(TO) modes were also observed. A classic simple approach is proposed in order to explain the presence of the TO modes.

Original languageEnglish
Pages (from-to)161-166
Number of pages6
JournalSolid State Communications
Volume104
Issue number3
DOIs
StatePublished - Oct 1997

Keywords

  • A. Semiconductors
  • A. Thin films
  • D. Phase transitions
  • D. Phonons

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