Radiation-induced variations in the spectral characteristics of InXGa1-XAs:Si light-emitting diodes

Radiation-induced variations in the spectral characteristics of In_XGa_1-XAs:Si light-emitting diodes

T. V. Torchinskaya, G. N. Semenova, T. G. Berdinskikh, E. Yu Brailovskii

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

Idioma original	Inglés
Páginas (desde-hasta)	828-833
Número de páginas	6
Publicación	Journal of Applied Spectroscopy
Volumen	45
N.º	2
DOI	https://doi.org/10.1007/BF00657466
Estado	Publicada - ago. 1986

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title = "Radiation-induced variations in the spectral characteristics of InXGa1-XAs:Si light-emitting diodes",

author = "Torchinskaya, {T. V.} and Semenova, {G. N.} and Berdinskikh, {T. G.} and Brailovskii, {E. Yu}",

year = "1986",

month = aug,

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language = "Ingl{\'e}s",

volume = "45",

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journal = "Journal of Applied Spectroscopy",

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T1 - Radiation-induced variations in the spectral characteristics of InXGa1-XAs:Si light-emitting diodes

AU - Torchinskaya, T. V.

AU - Semenova, G. N.

AU - Berdinskikh, T. G.

AU - Brailovskii, E. Yu

PY - 1986/8

Y1 - 1986/8

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U2 - 10.1007/BF00657466

DO - 10.1007/BF00657466

M3 - Artículo

SN - 0021-9037

VL - 45

SP - 828

EP - 833

JO - Journal of Applied Spectroscopy

JF - Journal of Applied Spectroscopy

IS - 2

ER -