Radiation-induced variations in the spectral characteristics of InXGa1-XAs:Si light-emitting diodes

Radiation-induced variations in the spectral characteristics of In_XGa_1-XAs:Si light-emitting diodes

T. V. Torchinskaya, G. N. Semenova, T. G. Berdinskikh, E. Yu Brailovskii

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	828-833
Number of pages	6
Journal	Journal of Applied Spectroscopy
Volume	45
Issue number	2
DOIs	https://doi.org/10.1007/BF00657466
State	Published - Aug 1986

@article{bc4d67a7204549e29ac7b24bc2b9117f,

title = "Radiation-induced variations in the spectral characteristics of InXGa1-XAs:Si light-emitting diodes",

author = "Torchinskaya, {T. V.} and Semenova, {G. N.} and Berdinskikh, {T. G.} and Brailovskii, {E. Yu}",

year = "1986",

month = aug,

doi = "10.1007/BF00657466",

language = "Ingl{\'e}s",

volume = "45",

pages = "828--833",

journal = "Journal of Applied Spectroscopy",

issn = "0021-9037",

number = "2",

}

TY - JOUR

T1 - Radiation-induced variations in the spectral characteristics of InXGa1-XAs:Si light-emitting diodes

AU - Torchinskaya, T. V.

AU - Semenova, G. N.

AU - Berdinskikh, T. G.

AU - Brailovskii, E. Yu

PY - 1986/8

Y1 - 1986/8

UR - http://www.scopus.com/inward/record.url?scp=0022768619&partnerID=8YFLogxK

U2 - 10.1007/BF00657466

DO - 10.1007/BF00657466

M3 - Artículo

SN - 0021-9037

VL - 45

SP - 828

EP - 833

JO - Journal of Applied Spectroscopy

JF - Journal of Applied Spectroscopy

IS - 2

ER -