Properties of pulsed laser deposited CdSxTe1-x films on glass

A. D. Compaan; Z. Feng; G. Contreras-Puente; C. Narayanswamy; A. Fischer

doi:10.1557/proc-426-367

Properties of pulsed laser deposited CdS_xTe_1-x films on glass

A. D. Compaan, Z. Feng, G. Contreras-Puente, C. Narayanswamy, A. Fischer

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

15 Citas (Scopus)

Resumen

Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdS_xTe_1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

Idioma original	Inglés
Páginas (desde-hasta)	367-371
Número de páginas	5
Publicación	Materials Research Society Symposium - Proceedings
Volumen	426
DOI	https://doi.org/10.1557/proc-426-367
Estado	Publicada - 1996
Publicado de forma externa	Sí
Evento	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duración: 8 abr. 1996 → 11 abr. 1996

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AU - Fischer, A.

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AB - Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

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