Properties of pulsed laser deposited CdSxTe1-x films on glass

A. D. Compaan; Z. Feng; G. Contreras-Puente; C. Narayanswamy; A. Fischer

doi:10.1557/proc-426-367

Properties of pulsed laser deposited CdS_xTe_1-x films on glass

A. D. Compaan, Z. Feng, G. Contreras-Puente, C. Narayanswamy, A. Fischer

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

Abstract

Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdS_xTe_1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

Original language	English
Pages (from-to)	367-371
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	426
DOIs	https://doi.org/10.1557/proc-426-367
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 8 Apr 1996 → 11 Apr 1996

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title = "Properties of pulsed laser deposited CdSxTe1-x films on glass",

abstract = "Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.",

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T1 - Properties of pulsed laser deposited CdSxTe1-x films on glass

AU - Compaan, A. D.

AU - Feng, Z.

AU - Contreras-Puente, G.

AU - Narayanswamy, C.

AU - Fischer, A.

PY - 1996

Y1 - 1996

N2 - Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

AB - Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

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U2 - 10.1557/proc-426-367

DO - 10.1557/proc-426-367

M3 - Artículo de la conferencia

AN - SCOPUS:0030413263

SN - 0272-9172

VL - 426

SP - 367

EP - 371

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 11 April 1996

ER -

Properties of pulsed laser deposited CdS_xTe_1-x films on glass

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