TY - JOUR
T1 - Pressure effects in RF and DC sputtered Sb2Te3 thin films and its applications into solar cells
AU - Mendoza-Pérez, R.
AU - Sastre-Hernández, J.
AU - Hernández-Pérez, M. A.
AU - Aguilar-Hernández, J.
AU - Del Oso, J. A.
AU - Santana-Rodríguez, G.
AU - Lizardi, J. J.
N1 - Publisher Copyright:
© 2020 Elsevier Ltd
PY - 2020/6/15
Y1 - 2020/6/15
N2 - In this work we developed the synthesis and characterization of Sb2Te3 thin films, which were grown by RF as well as DC sputtering as a function of the deposition pressure (Pd), 5–15 mTorr. Sb2Te3 films were characterized through X-Ray Diffraction, Energy Dispersive Spectrometry (EDS), Scanning Electron Microscopy (SEM) and electrical resistivity measurements. As a part, contact layer, of the CdTe-based Solar Cell, Current-Voltage (I–V) as well as External Quantum Efficiency (EQE) measurements were carried out. Our results indicate that the radio-frequency sputtered Sb2Te3 are polycrystalline with predominant rhombohedral crystalline structure, whereas the DC-sputtered films crystallized mainly in the monoclinical structure. Both set of samples showed a resistivity of the order of 10−4 Ω-cm. Concerning the CdTe-based solar cell, the incorporation of the Sb2Te3 as a back surface film in the back contact improves the solar cell efficiency up to 8.01%, 10 mTorr pressures into the growth chamber, as compared to the CdTe-based solar cell, 4.82% efficiency, without the Sb2Te3 layer.
AB - In this work we developed the synthesis and characterization of Sb2Te3 thin films, which were grown by RF as well as DC sputtering as a function of the deposition pressure (Pd), 5–15 mTorr. Sb2Te3 films were characterized through X-Ray Diffraction, Energy Dispersive Spectrometry (EDS), Scanning Electron Microscopy (SEM) and electrical resistivity measurements. As a part, contact layer, of the CdTe-based Solar Cell, Current-Voltage (I–V) as well as External Quantum Efficiency (EQE) measurements were carried out. Our results indicate that the radio-frequency sputtered Sb2Te3 are polycrystalline with predominant rhombohedral crystalline structure, whereas the DC-sputtered films crystallized mainly in the monoclinical structure. Both set of samples showed a resistivity of the order of 10−4 Ω-cm. Concerning the CdTe-based solar cell, the incorporation of the Sb2Te3 as a back surface film in the back contact improves the solar cell efficiency up to 8.01%, 10 mTorr pressures into the growth chamber, as compared to the CdTe-based solar cell, 4.82% efficiency, without the Sb2Te3 layer.
KW - CdTe solar cells
KW - SbTe
KW - Sputtering RF and DC
KW - p material
UR - http://www.scopus.com/inward/record.url?scp=85080050954&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2019.104876
DO - 10.1016/j.mssp.2019.104876
M3 - Artículo
AN - SCOPUS:85080050954
SN - 1369-8001
VL - 112
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 104876
ER -