Pressure effects in RF and DC sputtered Sb2Te3 thin films and its applications into solar cells

R. Mendoza-Pérez; J. Sastre-Hernández; M. A. Hernández-Pérez; J. Aguilar-Hernández; J. A. Del Oso; G. Santana-Rodríguez; J. J. Lizardi

doi:10.1016/j.mssp.2019.104876

Pressure effects in RF and DC sputtered Sb₂Te₃ thin films and its applications into solar cells

R. Mendoza-Pérez, J. Sastre-Hernández, M. A. Hernández-Pérez, J. Aguilar-Hernández, J. A. Del Oso, G. Santana-Rodríguez, J. J. Lizardi

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this work we developed the synthesis and characterization of Sb₂Te₃ thin films, which were grown by RF as well as DC sputtering as a function of the deposition pressure (P_d), 5–15 mTorr. Sb₂Te₃ films were characterized through X-Ray Diffraction, Energy Dispersive Spectrometry (EDS), Scanning Electron Microscopy (SEM) and electrical resistivity measurements. As a part, contact layer, of the CdTe-based Solar Cell, Current-Voltage (I–V) as well as External Quantum Efficiency (EQE) measurements were carried out. Our results indicate that the radio-frequency sputtered Sb₂Te₃ are polycrystalline with predominant rhombohedral crystalline structure, whereas the DC-sputtered films crystallized mainly in the monoclinical structure. Both set of samples showed a resistivity of the order of 10⁻⁴ Ω-cm. Concerning the CdTe-based solar cell, the incorporation of the Sb₂Te₃ as a back surface film in the back contact improves the solar cell efficiency up to 8.01%, 10 mTorr pressures into the growth chamber, as compared to the CdTe-based solar cell, 4.82% efficiency, without the Sb₂Te₃ layer.

Translated title of the contribution	Efectos de la presión en películas delgadas de Sb 2 Te 3 pulverizadas por RF y CC y sus aplicaciones en células solares
Original language	English
Article number	104876
Journal	Materials Science in Semiconductor Processing
Volume	112
DOIs	https://doi.org/10.1016/j.mssp.2019.104876
State	Published - 15 Jun 2020

Keywords

CdTe solar cells
SbTe
Sputtering RF and DC
p material

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title = "Pressure effects in RF and DC sputtered Sb2Te3 thin films and its applications into solar cells",

abstract = "In this work we developed the synthesis and characterization of Sb2Te3 thin films, which were grown by RF as well as DC sputtering as a function of the deposition pressure (Pd), 5–15 mTorr. Sb2Te3 films were characterized through X-Ray Diffraction, Energy Dispersive Spectrometry (EDS), Scanning Electron Microscopy (SEM) and electrical resistivity measurements. As a part, contact layer, of the CdTe-based Solar Cell, Current-Voltage (I–V) as well as External Quantum Efficiency (EQE) measurements were carried out. Our results indicate that the radio-frequency sputtered Sb2Te3 are polycrystalline with predominant rhombohedral crystalline structure, whereas the DC-sputtered films crystallized mainly in the monoclinical structure. Both set of samples showed a resistivity of the order of 10−4 Ω-cm. Concerning the CdTe-based solar cell, the incorporation of the Sb2Te3 as a back surface film in the back contact improves the solar cell efficiency up to 8.01%, 10 mTorr pressures into the growth chamber, as compared to the CdTe-based solar cell, 4.82% efficiency, without the Sb2Te3 layer.",

keywords = "CdTe solar cells, SbTe, Sputtering RF and DC, p material",

author = "R. Mendoza-P{\'e}rez and J. Sastre-Hern{\'a}ndez and Hern{\'a}ndez-P{\'e}rez, {M. A.} and J. Aguilar-Hern{\'a}ndez and {Del Oso}, {J. A.} and G. Santana-Rodr{\'i}guez and Lizardi, {J. J.}",

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year = "2020",

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day = "15",

doi = "10.1016/j.mssp.2019.104876",

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T1 - Pressure effects in RF and DC sputtered Sb2Te3 thin films and its applications into solar cells

AU - Mendoza-Pérez, R.

AU - Sastre-Hernández, J.

AU - Hernández-Pérez, M. A.

AU - Aguilar-Hernández, J.

AU - Del Oso, J. A.

AU - Santana-Rodríguez, G.

AU - Lizardi, J. J.

PY - 2020/6/15

Y1 - 2020/6/15

N2 - In this work we developed the synthesis and characterization of Sb2Te3 thin films, which were grown by RF as well as DC sputtering as a function of the deposition pressure (Pd), 5–15 mTorr. Sb2Te3 films were characterized through X-Ray Diffraction, Energy Dispersive Spectrometry (EDS), Scanning Electron Microscopy (SEM) and electrical resistivity measurements. As a part, contact layer, of the CdTe-based Solar Cell, Current-Voltage (I–V) as well as External Quantum Efficiency (EQE) measurements were carried out. Our results indicate that the radio-frequency sputtered Sb2Te3 are polycrystalline with predominant rhombohedral crystalline structure, whereas the DC-sputtered films crystallized mainly in the monoclinical structure. Both set of samples showed a resistivity of the order of 10−4 Ω-cm. Concerning the CdTe-based solar cell, the incorporation of the Sb2Te3 as a back surface film in the back contact improves the solar cell efficiency up to 8.01%, 10 mTorr pressures into the growth chamber, as compared to the CdTe-based solar cell, 4.82% efficiency, without the Sb2Te3 layer.

AB - In this work we developed the synthesis and characterization of Sb2Te3 thin films, which were grown by RF as well as DC sputtering as a function of the deposition pressure (Pd), 5–15 mTorr. Sb2Te3 films were characterized through X-Ray Diffraction, Energy Dispersive Spectrometry (EDS), Scanning Electron Microscopy (SEM) and electrical resistivity measurements. As a part, contact layer, of the CdTe-based Solar Cell, Current-Voltage (I–V) as well as External Quantum Efficiency (EQE) measurements were carried out. Our results indicate that the radio-frequency sputtered Sb2Te3 are polycrystalline with predominant rhombohedral crystalline structure, whereas the DC-sputtered films crystallized mainly in the monoclinical structure. Both set of samples showed a resistivity of the order of 10−4 Ω-cm. Concerning the CdTe-based solar cell, the incorporation of the Sb2Te3 as a back surface film in the back contact improves the solar cell efficiency up to 8.01%, 10 mTorr pressures into the growth chamber, as compared to the CdTe-based solar cell, 4.82% efficiency, without the Sb2Te3 layer.

KW - CdTe solar cells

KW - SbTe

KW - Sputtering RF and DC

KW - p material

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Pressure effects in RF and DC sputtered Sb₂Te₃ thin films and its applications into solar cells

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