TY - JOUR
T1 - Preparation, characterization and electronic properties of fluorine-doped tin oxide films
AU - Velázquez-Nevárez, G. A.
AU - Vargas-García, J. R.
AU - Lartundo-Rojas, L.
AU - Chen, Fei
AU - Shen, Qiang
AU - Zhang, Lianmeng
N1 - Publisher Copyright:
© 2016, Wuhan University of Technology and Springer-Verlag Berlin Heidelberg.
PY - 2016/2/1
Y1 - 2016/2/1
N2 - Tin oxide (SnO2) and fluorine doped tin oxide (FTO) films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors. Fluorine doping concentration was fixed at 4 at% and 20 at% by controlling precursor sol composition. Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration. Uniform and highly transparent FTO films, with more than 85% of optical transmittance, were obtained by annealing at 600 °C. Florine doping of films was verified by analyzing the valence band region obtained by XPS. It was found that the fluorine doping affects the shape of valence band of SnO2 films. In addition, it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.
AB - Tin oxide (SnO2) and fluorine doped tin oxide (FTO) films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors. Fluorine doping concentration was fixed at 4 at% and 20 at% by controlling precursor sol composition. Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration. Uniform and highly transparent FTO films, with more than 85% of optical transmittance, were obtained by annealing at 600 °C. Florine doping of films was verified by analyzing the valence band region obtained by XPS. It was found that the fluorine doping affects the shape of valence band of SnO2 films. In addition, it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.
KW - energy band diagram
KW - fluorine doping
KW - tin oxide films
UR - http://www.scopus.com/inward/record.url?scp=84957899844&partnerID=8YFLogxK
U2 - 10.1007/s11595-016-1328-5
DO - 10.1007/s11595-016-1328-5
M3 - Artículo
SN - 1000-2413
VL - 31
SP - 48
EP - 51
JO - Journal Wuhan University of Technology, Materials Science Edition
JF - Journal Wuhan University of Technology, Materials Science Edition
IS - 1
ER -