Preparation, characterization and electronic properties of fluorine-doped tin oxide films

G. A. Velázquez-Nevárez; J. R. Vargas-García; L. Lartundo-Rojas; Fei Chen; Qiang Shen; Lianmeng Zhang

doi:10.1007/s11595-016-1328-5

Preparation, characterization and electronic properties of fluorine-doped tin oxide films

G. A. Velázquez-Nevárez, J. R. Vargas-García, L. Lartundo-Rojas, Fei Chen, Qiang Shen, Lianmeng Zhang

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Tin oxide (SnO₂) and fluorine doped tin oxide (FTO) films were prepared on glass substrates by sol-gel spin-coating using SnCl₄ and NH₄F precursors. Fluorine doping concentration was fixed at 4 at% and 20 at% by controlling precursor sol composition. Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration. Uniform and highly transparent FTO films, with more than 85% of optical transmittance, were obtained by annealing at 600 °C. Florine doping of films was verified by analyzing the valence band region obtained by XPS. It was found that the fluorine doping affects the shape of valence band of SnO₂ films. In addition, it was observed that the band gap of SnO₂ is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.

Original language	English
Pages (from-to)	48-51
Number of pages	4
Journal	Journal Wuhan University of Technology, Materials Science Edition
Volume	31
Issue number	1
DOIs	https://doi.org/10.1007/s11595-016-1328-5
State	Published - 1 Feb 2016

Keywords

energy band diagram
fluorine doping
tin oxide films

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title = "Preparation, characterization and electronic properties of fluorine-doped tin oxide films",

abstract = "Tin oxide (SnO2) and fluorine doped tin oxide (FTO) films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors. Fluorine doping concentration was fixed at 4 at% and 20 at% by controlling precursor sol composition. Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration. Uniform and highly transparent FTO films, with more than 85% of optical transmittance, were obtained by annealing at 600 °C. Florine doping of films was verified by analyzing the valence band region obtained by XPS. It was found that the fluorine doping affects the shape of valence band of SnO2 films. In addition, it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.",

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T1 - Preparation, characterization and electronic properties of fluorine-doped tin oxide films

AU - Velázquez-Nevárez, G. A.

AU - Vargas-García, J. R.

AU - Lartundo-Rojas, L.

AU - Chen, Fei

AU - Shen, Qiang

AU - Zhang, Lianmeng

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Tin oxide (SnO2) and fluorine doped tin oxide (FTO) films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors. Fluorine doping concentration was fixed at 4 at% and 20 at% by controlling precursor sol composition. Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration. Uniform and highly transparent FTO films, with more than 85% of optical transmittance, were obtained by annealing at 600 °C. Florine doping of films was verified by analyzing the valence band region obtained by XPS. It was found that the fluorine doping affects the shape of valence band of SnO2 films. In addition, it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.

AB - Tin oxide (SnO2) and fluorine doped tin oxide (FTO) films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors. Fluorine doping concentration was fixed at 4 at% and 20 at% by controlling precursor sol composition. Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration. Uniform and highly transparent FTO films, with more than 85% of optical transmittance, were obtained by annealing at 600 °C. Florine doping of films was verified by analyzing the valence band region obtained by XPS. It was found that the fluorine doping affects the shape of valence band of SnO2 films. In addition, it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.

KW - energy band diagram

KW - fluorine doping

KW - tin oxide films

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JO - Journal Wuhan University of Technology, Materials Science Edition

JF - Journal Wuhan University of Technology, Materials Science Edition

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Preparation, characterization and electronic properties of fluorine-doped tin oxide films

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Keywords

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