Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures

J. L. Casas Espínola; G. Polupan

doi:10.1016/j.mseb.2011.05.009

Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures

Título traducido de la contribución: Estudio de barrera potencial en la interfaz de puntos cuánticos InGaAs/InAs en estructuras asimétricas de pozos cuánticos múltiples

J. L. Casas Espínola, G. Polupan

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Resumen

The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In _xGa_1-xAs/In_0.15Ga_0.85As/GaAs quantum wells (dot-in-a-well, DWELL structures) as a function of the In content x (x = 0.10-0.25) in the capping In_xGa_1-xAs layer. The study of PL temperature dependences in the range of 80-120 K has revealed the potential barrier for electrons at the capping In_xGa_1-xAs/InAs QD interface. The value of mentioned barrier has varied in QD structures with the different In_xGa_1-xAs capping layer compositions and it was estimated in the studied asymmetric GaAs/In_xGa_1-xAs/ In_0.15Ga_0.85As/GaAs DWELL structures. It is shown that the barrier for electrons equal to 48 and 24 meV appears in the InGaAs conduction band at the formation of InGaAs QW/InAs QD interface for the In compositions of x = 0.10 and 0.15, respectively. This barrier has not been detected in DWELLs with the In compositions x = 0.20 and 0.25. The energy gap offsets at the InAs/In_xGa_1-xAs interface in studied structures has been estimated and discussed as well.

Título traducido de la contribución	Estudio de barrera potencial en la interfaz de puntos cuánticos InGaAs/InAs en estructuras asimétricas de pozos cuánticos múltiples
Idioma original	Inglés
Páginas (desde-hasta)	1364-1367
Número de páginas	4
Publicación	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volumen	176
N.º	17
DOI	https://doi.org/10.1016/j.mseb.2011.05.009
Estado	Publicada - 25 oct. 2011

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title = "Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures",

abstract = "The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In xGa1-xAs/In0.15Ga0.85As/GaAs quantum wells (dot-in-a-well, DWELL structures) as a function of the In content x (x = 0.10-0.25) in the capping InxGa1-xAs layer. The study of PL temperature dependences in the range of 80-120 K has revealed the potential barrier for electrons at the capping InxGa1-xAs/InAs QD interface. The value of mentioned barrier has varied in QD structures with the different InxGa1-xAs capping layer compositions and it was estimated in the studied asymmetric GaAs/InxGa1-xAs/ In0.15Ga0.85As/GaAs DWELL structures. It is shown that the barrier for electrons equal to 48 and 24 meV appears in the InGaAs conduction band at the formation of InGaAs QW/InAs QD interface for the In compositions of x = 0.10 and 0.15, respectively. This barrier has not been detected in DWELLs with the In compositions x = 0.20 and 0.25. The energy gap offsets at the InAs/InxGa1-xAs interface in studied structures has been estimated and discussed as well.",

keywords = "InAs quantum dots, InGaAs/GaAs quantum wells, Photoluminescence",

author = "{Casas Esp{\'i}nola}, {J. L.} and G. Polupan",

note = "Funding Information: The work was partially supported by CONACYT Mexico (project 000130387) and by SIP-IPN, Mexico.",

year = "2011",

month = oct,

day = "25",

doi = "10.1016/j.mseb.2011.05.009",

language = "Ingl{\'e}s",

volume = "176",

pages = "1364--1367",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

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Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures. / Casas Espínola, J. L.; Polupan, G.
En: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 176, N.º 17, 25.10.2011, p. 1364-1367.

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

TY - JOUR

T1 - Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures

AU - Casas Espínola, J. L.

AU - Polupan, G.

N1 - Funding Information: The work was partially supported by CONACYT Mexico (project 000130387) and by SIP-IPN, Mexico.

PY - 2011/10/25

Y1 - 2011/10/25

N2 - The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In xGa1-xAs/In0.15Ga0.85As/GaAs quantum wells (dot-in-a-well, DWELL structures) as a function of the In content x (x = 0.10-0.25) in the capping InxGa1-xAs layer. The study of PL temperature dependences in the range of 80-120 K has revealed the potential barrier for electrons at the capping InxGa1-xAs/InAs QD interface. The value of mentioned barrier has varied in QD structures with the different InxGa1-xAs capping layer compositions and it was estimated in the studied asymmetric GaAs/InxGa1-xAs/ In0.15Ga0.85As/GaAs DWELL structures. It is shown that the barrier for electrons equal to 48 and 24 meV appears in the InGaAs conduction band at the formation of InGaAs QW/InAs QD interface for the In compositions of x = 0.10 and 0.15, respectively. This barrier has not been detected in DWELLs with the In compositions x = 0.20 and 0.25. The energy gap offsets at the InAs/InxGa1-xAs interface in studied structures has been estimated and discussed as well.

AB - The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In xGa1-xAs/In0.15Ga0.85As/GaAs quantum wells (dot-in-a-well, DWELL structures) as a function of the In content x (x = 0.10-0.25) in the capping InxGa1-xAs layer. The study of PL temperature dependences in the range of 80-120 K has revealed the potential barrier for electrons at the capping InxGa1-xAs/InAs QD interface. The value of mentioned barrier has varied in QD structures with the different InxGa1-xAs capping layer compositions and it was estimated in the studied asymmetric GaAs/InxGa1-xAs/ In0.15Ga0.85As/GaAs DWELL structures. It is shown that the barrier for electrons equal to 48 and 24 meV appears in the InGaAs conduction band at the formation of InGaAs QW/InAs QD interface for the In compositions of x = 0.10 and 0.15, respectively. This barrier has not been detected in DWELLs with the In compositions x = 0.20 and 0.25. The energy gap offsets at the InAs/InxGa1-xAs interface in studied structures has been estimated and discussed as well.

KW - InAs quantum dots

KW - InGaAs/GaAs quantum wells

KW - Photoluminescence

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U2 - 10.1016/j.mseb.2011.05.009

DO - 10.1016/j.mseb.2011.05.009

M3 - Artículo

AN - SCOPUS:80955178273

SN - 0921-5107

VL - 176

SP - 1364

EP - 1367

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 17

ER -

Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures

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