Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures

J. L. Casas Espínola; G. Polupan

doi:10.1016/j.mseb.2011.05.009

Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures

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Abstract

The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In _xGa_1-xAs/In_0.15Ga_0.85As/GaAs quantum wells (dot-in-a-well, DWELL structures) as a function of the In content x (x = 0.10-0.25) in the capping In_xGa_1-xAs layer. The study of PL temperature dependences in the range of 80-120 K has revealed the potential barrier for electrons at the capping In_xGa_1-xAs/InAs QD interface. The value of mentioned barrier has varied in QD structures with the different In_xGa_1-xAs capping layer compositions and it was estimated in the studied asymmetric GaAs/In_xGa_1-xAs/ In_0.15Ga_0.85As/GaAs DWELL structures. It is shown that the barrier for electrons equal to 48 and 24 meV appears in the InGaAs conduction band at the formation of InGaAs QW/InAs QD interface for the In compositions of x = 0.10 and 0.15, respectively. This barrier has not been detected in DWELLs with the In compositions x = 0.20 and 0.25. The energy gap offsets at the InAs/In_xGa_1-xAs interface in studied structures has been estimated and discussed as well.

Translated title of the contribution	Estudio de barrera potencial en la interfaz de puntos cuánticos InGaAs/InAs en estructuras asimétricas de pozos cuánticos múltiples
Original language	English
Pages (from-to)	1364-1367
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	176
Issue number	17
DOIs	https://doi.org/10.1016/j.mseb.2011.05.009
State	Published - 25 Oct 2011

Keywords

InAs quantum dots
InGaAs/GaAs quantum wells
Photoluminescence

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10.1016/j.mseb.2011.05.009

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title = "Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures",

abstract = "The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In xGa1-xAs/In0.15Ga0.85As/GaAs quantum wells (dot-in-a-well, DWELL structures) as a function of the In content x (x = 0.10-0.25) in the capping InxGa1-xAs layer. The study of PL temperature dependences in the range of 80-120 K has revealed the potential barrier for electrons at the capping InxGa1-xAs/InAs QD interface. The value of mentioned barrier has varied in QD structures with the different InxGa1-xAs capping layer compositions and it was estimated in the studied asymmetric GaAs/InxGa1-xAs/ In0.15Ga0.85As/GaAs DWELL structures. It is shown that the barrier for electrons equal to 48 and 24 meV appears in the InGaAs conduction band at the formation of InGaAs QW/InAs QD interface for the In compositions of x = 0.10 and 0.15, respectively. This barrier has not been detected in DWELLs with the In compositions x = 0.20 and 0.25. The energy gap offsets at the InAs/InxGa1-xAs interface in studied structures has been estimated and discussed as well.",

keywords = "InAs quantum dots, InGaAs/GaAs quantum wells, Photoluminescence",

author = "{Casas Esp{\'i}nola}, {J. L.} and G. Polupan",

note = "Funding Information: The work was partially supported by CONACYT Mexico (project 000130387) and by SIP-IPN, Mexico.",

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T1 - Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures

AU - Casas Espínola, J. L.

AU - Polupan, G.

N1 - Funding Information: The work was partially supported by CONACYT Mexico (project 000130387) and by SIP-IPN, Mexico.

PY - 2011/10/25

Y1 - 2011/10/25

N2 - The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In xGa1-xAs/In0.15Ga0.85As/GaAs quantum wells (dot-in-a-well, DWELL structures) as a function of the In content x (x = 0.10-0.25) in the capping InxGa1-xAs layer. The study of PL temperature dependences in the range of 80-120 K has revealed the potential barrier for electrons at the capping InxGa1-xAs/InAs QD interface. The value of mentioned barrier has varied in QD structures with the different InxGa1-xAs capping layer compositions and it was estimated in the studied asymmetric GaAs/InxGa1-xAs/ In0.15Ga0.85As/GaAs DWELL structures. It is shown that the barrier for electrons equal to 48 and 24 meV appears in the InGaAs conduction band at the formation of InGaAs QW/InAs QD interface for the In compositions of x = 0.10 and 0.15, respectively. This barrier has not been detected in DWELLs with the In compositions x = 0.20 and 0.25. The energy gap offsets at the InAs/InxGa1-xAs interface in studied structures has been estimated and discussed as well.

AB - The photoluminescence and its temperature dependences have been investigated for the InAs quantum dots embedded in the asymmetric GaAs/In xGa1-xAs/In0.15Ga0.85As/GaAs quantum wells (dot-in-a-well, DWELL structures) as a function of the In content x (x = 0.10-0.25) in the capping InxGa1-xAs layer. The study of PL temperature dependences in the range of 80-120 K has revealed the potential barrier for electrons at the capping InxGa1-xAs/InAs QD interface. The value of mentioned barrier has varied in QD structures with the different InxGa1-xAs capping layer compositions and it was estimated in the studied asymmetric GaAs/InxGa1-xAs/ In0.15Ga0.85As/GaAs DWELL structures. It is shown that the barrier for electrons equal to 48 and 24 meV appears in the InGaAs conduction band at the formation of InGaAs QW/InAs QD interface for the In compositions of x = 0.10 and 0.15, respectively. This barrier has not been detected in DWELLs with the In compositions x = 0.20 and 0.25. The energy gap offsets at the InAs/InxGa1-xAs interface in studied structures has been estimated and discussed as well.

KW - InAs quantum dots

KW - InGaAs/GaAs quantum wells

KW - Photoluminescence

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ER -

Potential barrier study at the InGaAs/InAs quantum dot interface in asymmetric multi quantum well structures

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