TY - JOUR
T1 - Polycrystalline Cd1-xZnxTe thin films on glass by pulsed laser deposition
AU - Aydinli, A.
AU - Compaan, A.
AU - Contreras-Puente, G.
AU - Mason, Alice
PY - 1991/11
Y1 - 1991/11
N2 - Polycrystalline thin films of Cd1-xZnxTe on glass were grown by pulsed laser deposition using an XeCl excimer laser. X-ray diffraction, optical absorption, Raman scattering and energy dispersive x-ray analysis were used to characterize these films. The grains show a predominant <111> orientation with considerable amounts of <113> for the alloys. The band gap energy exhibits a small amount of bowing and the phonons display the expected two-mode behavior. Substrate temperatures above 275°C resulted in optical quality films with good stochiometry for deposition rates below ∼ 1 Å/ pulse.
AB - Polycrystalline thin films of Cd1-xZnxTe on glass were grown by pulsed laser deposition using an XeCl excimer laser. X-ray diffraction, optical absorption, Raman scattering and energy dispersive x-ray analysis were used to characterize these films. The grains show a predominant <111> orientation with considerable amounts of <113> for the alloys. The band gap energy exhibits a small amount of bowing and the phonons display the expected two-mode behavior. Substrate temperatures above 275°C resulted in optical quality films with good stochiometry for deposition rates below ∼ 1 Å/ pulse.
UR - http://www.scopus.com/inward/record.url?scp=0026255669&partnerID=8YFLogxK
U2 - 10.1016/0038-1098(91)90051-V
DO - 10.1016/0038-1098(91)90051-V
M3 - Artículo
SN - 0038-1098
VL - 80
SP - 465
EP - 468
JO - Solid State Communications
JF - Solid State Communications
IS - 7
ER -