Photovoltaic structures based on Cu(In, Ga)Se 2 thin films prepared by thermal co-evaporation

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Resumen

In this work, we are reporting the results of the deposition and characterization of Cu(InGa)Se 2 thin films prepared by thermal co-evaporation and the results of the photovoltaic devices made with these Cu(In, Ga)Se 2 thin films, using as the window material partner a CdS layer prepared from two different chemical bath solution recipes. Results have shown that high quality polycrystalline films have been obtained, which have very uniform morphology with grain sizes of tenths of a micrometer and a chemical composition very close to the stoichiometry of the Cu(In, Ga)Se 2. After processing the Cu(In, Ga)Se 2 thin film samples into solar cells, the highest conversion efficiency achieved was ∼ 11 %.

Idioma originalInglés
Título de la publicación alojadaProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Páginas1362-1364
Número de páginas3
DOI
EstadoPublicada - 2011
Evento37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, Estados Unidos
Duración: 19 jun. 201124 jun. 2011

Serie de la publicación

NombreConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (versión impresa)0160-8371

Conferencia

Conferencia37th IEEE Photovoltaic Specialists Conference, PVSC 2011
País/TerritorioEstados Unidos
CiudadSeattle, WA
Período19/06/1124/06/11

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