Photovoltaic structures based on Cu(In, Ga)Se 2 thin films prepared by thermal co-evaporation

J. Sastré-Hernández; M. E. Calixto; M. L. Albor-Aguilera; M. Tufiño-Velázquez; G. Contreras-Puente; A. Morales-Acevedo; G. Casados

doi:10.1109/PVSC.2011.6186210

Photovoltaic structures based on Cu(In, Ga)Se ₂ thin films prepared by thermal co-evaporation

J. Sastré-Hernández, M. E. Calixto, M. L. Albor-Aguilera, M. Tufiño-Velázquez, G. Contreras-Puente, A. Morales-Acevedo, G. Casados

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we are reporting the results of the deposition and characterization of Cu(InGa)Se ₂ thin films prepared by thermal co-evaporation and the results of the photovoltaic devices made with these Cu(In, Ga)Se ₂ thin films, using as the window material partner a CdS layer prepared from two different chemical bath solution recipes. Results have shown that high quality polycrystalline films have been obtained, which have very uniform morphology with grain sizes of tenths of a micrometer and a chemical composition very close to the stoichiometry of the Cu(In, Ga)Se ₂. After processing the Cu(In, Ga)Se ₂ thin film samples into solar cells, the highest conversion efficiency achieved was ∼ 11 %.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	1362-1364
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2011.6186210
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2011.6186210

Cite this

Sastré-Hernández, J., Calixto, M. E., Albor-Aguilera, M. L., Tufiño-Velázquez, M., Contreras-Puente, G., Morales-Acevedo, A., & Casados, G. (2011). Photovoltaic structures based on Cu(In, Ga)Se ₂ thin films prepared by thermal co-evaporation. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 1362-1364). Article 6186210 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186210

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title = "Photovoltaic structures based on Cu(In, Ga)Se 2 thin films prepared by thermal co-evaporation",

abstract = "In this work, we are reporting the results of the deposition and characterization of Cu(InGa)Se 2 thin films prepared by thermal co-evaporation and the results of the photovoltaic devices made with these Cu(In, Ga)Se 2 thin films, using as the window material partner a CdS layer prepared from two different chemical bath solution recipes. Results have shown that high quality polycrystalline films have been obtained, which have very uniform morphology with grain sizes of tenths of a micrometer and a chemical composition very close to the stoichiometry of the Cu(In, Ga)Se 2. After processing the Cu(In, Ga)Se 2 thin film samples into solar cells, the highest conversion efficiency achieved was ∼ 11 %.",

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note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

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Sastré-Hernández, J, Calixto, ME, Albor-Aguilera, ML , Tufiño-Velázquez, M , Contreras-Puente, G, Morales-Acevedo, A & Casados, G 2011, Photovoltaic structures based on Cu(In, Ga)Se ₂ thin films prepared by thermal co-evaporation. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186210, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1362-1364, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11. https://doi.org/10.1109/PVSC.2011.6186210

Photovoltaic structures based on Cu(In, Ga)Se ₂ thin films prepared by thermal co-evaporation. / Sastré-Hernández, J.; Calixto, M. E.; Albor-Aguilera, M. L. et al.
Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 1362-1364 6186210 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Sastré-Hernández, J.

AU - Calixto, M. E.

AU - Albor-Aguilera, M. L.

AU - Tufiño-Velázquez, M.

AU - Contreras-Puente, G.

AU - Morales-Acevedo, A.

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AB - In this work, we are reporting the results of the deposition and characterization of Cu(InGa)Se 2 thin films prepared by thermal co-evaporation and the results of the photovoltaic devices made with these Cu(In, Ga)Se 2 thin films, using as the window material partner a CdS layer prepared from two different chemical bath solution recipes. Results have shown that high quality polycrystalline films have been obtained, which have very uniform morphology with grain sizes of tenths of a micrometer and a chemical composition very close to the stoichiometry of the Cu(In, Ga)Se 2. After processing the Cu(In, Ga)Se 2 thin film samples into solar cells, the highest conversion efficiency achieved was ∼ 11 %.

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Sastré-Hernández J, Calixto ME, Albor-Aguilera ML , Tufiño-Velázquez M , Contreras-Puente G, Morales-Acevedo A et al. Photovoltaic structures based on Cu(In, Ga)Se ₂ thin films prepared by thermal co-evaporation. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 1362-1364. 6186210. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2011.6186210