Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

V. H. Méndez-García; L. Zamora; A. Lastras-Martinez; N. Saucedo; R. Peña; A. Guillén; Z. Rivera; M. Meléndez; M. López; F. Hernández; J. Huerta

doi:10.1116/1.1459460

Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

V. H. Méndez-García, L. Zamora, A. Lastras-Martinez, N. Saucedo, R. Peña, A. Guillén, Z. Rivera, M. Meléndez, M. López, F. Hernández, J. Huerta

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Resumen

A study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas (2-DEG) system grown under different conditions by molecular beam epitaxy was presented. It was found that the sample with highest electron mobility exhibited the lowest electric field strength. The analysis suggested that the electron mobility was affected by unintentional C impurities which acted like dispersion centers in the 2-DEG and increased the internal electric fields in the GaAs region.

Idioma original	Inglés estadounidense
Páginas	1238-1242
Número de páginas	5
DOI	https://doi.org/10.1116/1.1459460
Estado	Publicada - 1 may. 2002
Publicado de forma externa	Sí
Evento	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures - Duración: 1 may. 2002 → …

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Conferencia	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Período	1/05/02 → …

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Méndez-García, V. H., Zamora, L., Lastras-Martinez, A., Saucedo, N., Peña, R., Guillén, A., Rivera, Z., Meléndez, M., López, M., Hernández, F., & Huerta, J. (2002). Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system. 1238-1242. Papel presentado en Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. https://doi.org/10.1116/1.1459460

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abstract = "A study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas (2-DEG) system grown under different conditions by molecular beam epitaxy was presented. It was found that the sample with highest electron mobility exhibited the lowest electric field strength. The analysis suggested that the electron mobility was affected by unintentional C impurities which acted like dispersion centers in the 2-DEG and increased the internal electric fields in the GaAs region.",

author = "M{\'e}ndez-Garc{\'i}a, {V. H.} and L. Zamora and A. Lastras-Martinez and N. Saucedo and R. Pe{\~n}a and A. Guill{\'e}n and Z. Rivera and M. Mel{\'e}ndez and M. L{\'o}pez and F. Hern{\'a}ndez and J. Huerta",

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doi = "10.1116/1.1459460",

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Méndez-García, VH, Zamora, L, Lastras-Martinez, A, Saucedo, N, Peña, R, Guillén, A, Rivera, Z, Meléndez, M, López, M, Hernández, F & Huerta, J 2002, 'Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system', Papel presentado en Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1/05/02 pp. 1238-1242. https://doi.org/10.1116/1.1459460

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T1 - Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

AU - Méndez-García, V. H.

AU - Zamora, L.

AU - Lastras-Martinez, A.

AU - Saucedo, N.

AU - Peña, R.

AU - Guillén, A.

AU - Rivera, Z.

AU - Meléndez, M.

AU - López, M.

AU - Hernández, F.

AU - Huerta, J.

PY - 2002/5/1

Y1 - 2002/5/1

N2 - A study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas (2-DEG) system grown under different conditions by molecular beam epitaxy was presented. It was found that the sample with highest electron mobility exhibited the lowest electric field strength. The analysis suggested that the electron mobility was affected by unintentional C impurities which acted like dispersion centers in the 2-DEG and increased the internal electric fields in the GaAs region.

AB - A study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas (2-DEG) system grown under different conditions by molecular beam epitaxy was presented. It was found that the sample with highest electron mobility exhibited the lowest electric field strength. The analysis suggested that the electron mobility was affected by unintentional C impurities which acted like dispersion centers in the 2-DEG and increased the internal electric fields in the GaAs region.

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T2 - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Y2 - 1 May 2002

ER -

Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

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