Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

V. H. Méndez-García; L. Zamora; A. Lastras-Martinez; N. Saucedo; R. Peña; A. Guillén; Z. Rivera; M. Meléndez; M. López; F. Hernández; J. Huerta

doi:10.1116/1.1459460

Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

V. H. Méndez-García, L. Zamora, A. Lastras-Martinez, N. Saucedo, R. Peña, A. Guillén, Z. Rivera, M. Meléndez, M. López, F. Hernández, J. Huerta

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Abstract

A study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas (2-DEG) system grown under different conditions by molecular beam epitaxy was presented. It was found that the sample with highest electron mobility exhibited the lowest electric field strength. The analysis suggested that the electron mobility was affected by unintentional C impurities which acted like dispersion centers in the 2-DEG and increased the internal electric fields in the GaAs region.

Original language	American English
Pages	1238-1242
Number of pages	5
DOIs	https://doi.org/10.1116/1.1459460
State	Published - 1 May 2002
Externally published	Yes
Event	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures - Duration: 1 May 2002 → …

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Conference	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Period	1/05/02 → …

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Méndez-García, V. H., Zamora, L., Lastras-Martinez, A., Saucedo, N., Peña, R., Guillén, A., Rivera, Z., Meléndez, M., López, M., Hernández, F., & Huerta, J. (2002). Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system. 1238-1242. Paper presented at Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. https://doi.org/10.1116/1.1459460

@conference{2c9f4f8644d04f83ab2eae47362a6a33,

title = "Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system",

abstract = "A study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas (2-DEG) system grown under different conditions by molecular beam epitaxy was presented. It was found that the sample with highest electron mobility exhibited the lowest electric field strength. The analysis suggested that the electron mobility was affected by unintentional C impurities which acted like dispersion centers in the 2-DEG and increased the internal electric fields in the GaAs region.",

author = "M{\'e}ndez-Garc{\'i}a, {V. H.} and L. Zamora and A. Lastras-Martinez and N. Saucedo and R. Pe{\~n}a and A. Guill{\'e}n and Z. Rivera and M. Mel{\'e}ndez and M. L{\'o}pez and F. Hern{\'a}ndez and J. Huerta",

year = "2002",

month = may,

day = "1",

doi = "10.1116/1.1459460",

language = "American English",

pages = "1238--1242",

note = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures ; Conference date: 01-05-2002",

}

Méndez-García, VH, Zamora, L, Lastras-Martinez, A, Saucedo, N, Peña, R, Guillén, A, Rivera, Z, Meléndez, M, López, M, Hernández, F & Huerta, J 2002, 'Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system', Paper presented at Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1/05/02 pp. 1238-1242. https://doi.org/10.1116/1.1459460

TY - CONF

T1 - Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

AU - Méndez-García, V. H.

AU - Zamora, L.

AU - Lastras-Martinez, A.

AU - Saucedo, N.

AU - Peña, R.

AU - Guillén, A.

AU - Rivera, Z.

AU - Meléndez, M.

AU - López, M.

AU - Hernández, F.

AU - Huerta, J.

PY - 2002/5/1

Y1 - 2002/5/1

N2 - A study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas (2-DEG) system grown under different conditions by molecular beam epitaxy was presented. It was found that the sample with highest electron mobility exhibited the lowest electric field strength. The analysis suggested that the electron mobility was affected by unintentional C impurities which acted like dispersion centers in the 2-DEG and increased the internal electric fields in the GaAs region.

AB - A study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas (2-DEG) system grown under different conditions by molecular beam epitaxy was presented. It was found that the sample with highest electron mobility exhibited the lowest electric field strength. The analysis suggested that the electron mobility was affected by unintentional C impurities which acted like dispersion centers in the 2-DEG and increased the internal electric fields in the GaAs region.

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0035998563&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=0035998563&origin=inward

U2 - 10.1116/1.1459460

DO - 10.1116/1.1459460

M3 - Paper

SP - 1238

EP - 1242

T2 - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Y2 - 1 May 2002

ER -

Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system

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