Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities

T. V. Torchynska; E. Velazquez Lozada; J. L. Casas Espinola

doi:10.1116/1.3010718

Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities

T. V. Torchynska, E. Velazquez Lozada, J. L. Casas Espinola

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

15 Citas (Scopus)

Resumen

Photoluminescence (PL) and its temperature dependence have been investigated in InAs quantum dots (QDs) embedded in In0.15 Ga0.85 AsGaAs quantum wells (QWs). The QD density varied from 1.1× 1011 down to 1.3× 1010 cm-2 with an increase in QD growth temperature. Three stages have been revealed in the thermal decay of the PL intensity in InAs QDs. A variety of activation energies of PL thermal decay are discussed. Numerical simulations of experimental PL thermal decay curves give possibility to analyze the area of localization of nonradiative defects in InGaAsGaAs QW structures with different InAs QD densities.

Idioma original	Inglés
Páginas (desde-hasta)	919-922
Número de páginas	4
Publicación	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volumen	27
N.º	2
DOI	https://doi.org/10.1116/1.3010718
Estado	Publicada - 2009

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@article{a9cd3eef7f3b4329bcc5566ef455c1c9,

title = "Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities",

abstract = "Photoluminescence (PL) and its temperature dependence have been investigated in InAs quantum dots (QDs) embedded in In0.15 Ga0.85 AsGaAs quantum wells (QWs). The QD density varied from 1.1× 1011 down to 1.3× 1010 cm-2 with an increase in QD growth temperature. Three stages have been revealed in the thermal decay of the PL intensity in InAs QDs. A variety of activation energies of PL thermal decay are discussed. Numerical simulations of experimental PL thermal decay curves give possibility to analyze the area of localization of nonradiative defects in InGaAsGaAs QW structures with different InAs QD densities.",

author = "Torchynska, {T. V.} and {Velazquez Lozada}, E. and {Casas Espinola}, {J. L.}",

note = "Funding Information: The authors thank Dr. A. Stintz of the Center of High Technology Materials at the University of New Mexico, Albuquerque, USA for growing the studied DWELL structures. The work was partially supported by the CONACYT Mexico (Project No. 58358), and SIP-IPN, Mexico.",

year = "2009",

doi = "10.1116/1.3010718",

language = "Ingl{\'e}s",

volume = "27",

pages = "919--922",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "2",

}

Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities. / Torchynska, T. V.; Velazquez Lozada, E.; Casas Espinola, J. L.
En: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, N.º 2, 2009, p. 919-922.

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

TY - JOUR

T1 - Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities

AU - Torchynska, T. V.

AU - Velazquez Lozada, E.

AU - Casas Espinola, J. L.

N1 - Funding Information: The authors thank Dr. A. Stintz of the Center of High Technology Materials at the University of New Mexico, Albuquerque, USA for growing the studied DWELL structures. The work was partially supported by the CONACYT Mexico (Project No. 58358), and SIP-IPN, Mexico.

PY - 2009

Y1 - 2009

N2 - Photoluminescence (PL) and its temperature dependence have been investigated in InAs quantum dots (QDs) embedded in In0.15 Ga0.85 AsGaAs quantum wells (QWs). The QD density varied from 1.1× 1011 down to 1.3× 1010 cm-2 with an increase in QD growth temperature. Three stages have been revealed in the thermal decay of the PL intensity in InAs QDs. A variety of activation energies of PL thermal decay are discussed. Numerical simulations of experimental PL thermal decay curves give possibility to analyze the area of localization of nonradiative defects in InGaAsGaAs QW structures with different InAs QD densities.

AB - Photoluminescence (PL) and its temperature dependence have been investigated in InAs quantum dots (QDs) embedded in In0.15 Ga0.85 AsGaAs quantum wells (QWs). The QD density varied from 1.1× 1011 down to 1.3× 1010 cm-2 with an increase in QD growth temperature. Three stages have been revealed in the thermal decay of the PL intensity in InAs QDs. A variety of activation energies of PL thermal decay are discussed. Numerical simulations of experimental PL thermal decay curves give possibility to analyze the area of localization of nonradiative defects in InGaAsGaAs QW structures with different InAs QD densities.

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U2 - 10.1116/1.3010718

DO - 10.1116/1.3010718

M3 - Artículo

SN - 1071-1023

VL - 27

SP - 919

EP - 922

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities

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