Abstract
Photoluminescence (PL) and its temperature dependence have been investigated in InAs quantum dots (QDs) embedded in In0.15 Ga0.85 AsGaAs quantum wells (QWs). The QD density varied from 1.1× 1011 down to 1.3× 1010 cm-2 with an increase in QD growth temperature. Three stages have been revealed in the thermal decay of the PL intensity in InAs QDs. A variety of activation energies of PL thermal decay are discussed. Numerical simulations of experimental PL thermal decay curves give possibility to analyze the area of localization of nonradiative defects in InGaAsGaAs QW structures with different InAs QD densities.
Original language | English |
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Pages (from-to) | 919-922 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 27 |
Issue number | 2 |
DOIs | |
State | Published - 2009 |