TY - JOUR
T1 - Photoluminescence spectra and carrier mobilities in polycrystalline films of CdTe
AU - Figueroa, J. M.
AU - Sánchez-Sinencio, F.
AU - Mendoza-Alvarez, J. G.
AU - Zelaya, O.
AU - Contreras-Puente, G.
AU - Díaz-Góngora, A.
N1 - Funding Information:
writtento MissversionRosarioofRodriguezthis workCampaand toforMr.theEstebantype- Basurto Casares for the drawings. We acknowledge the financial support of Dirección General de Investigación CientIfica, SEP. Mexico, and
PY - 1990/12
Y1 - 1990/12
N2 - The radiative defect density, as determined by low temperature photoluminescence, measured in CdTe polycrystalline films, is compared with electron and hole lateral mobilities measured on the same films. This comparison shows that intracrystalline and/or intercrystalline density of defects is more important in large grain films than in small grain films. In any case charge carrier transport in the films is a trap-charge-controlled process.
AB - The radiative defect density, as determined by low temperature photoluminescence, measured in CdTe polycrystalline films, is compared with electron and hole lateral mobilities measured on the same films. This comparison shows that intracrystalline and/or intercrystalline density of defects is more important in large grain films than in small grain films. In any case charge carrier transport in the films is a trap-charge-controlled process.
UR - http://www.scopus.com/inward/record.url?scp=0025535462&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(90)90039-N
DO - 10.1016/0022-0248(90)90039-N
M3 - Artículo
SN - 0022-0248
VL - 106
SP - 651
EP - 656
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 4
ER -