Photoluminescence of as-grown and thermal annealed SiOx/Si- nanocrystals heterolayers grown by reactive rf sputtering

E. Mota-Pineda; M. Meléndez-Lira; M. Zapata-Torres; P. Del Angel; A. Pérez-Centeno; S. Jiménez-Sandoval; M. A. Santana-Aranda

doi:10.1063/1.3506424

Photoluminescence of as-grown and thermal annealed SiO_x/Si- nanocrystals heterolayers grown by reactive rf sputtering

E. Mota-Pineda, M. Meléndez-Lira, M. Zapata-Torres, P. Del Angel, A. Pérez-Centeno, S. Jiménez-Sandoval, M. A. Santana-Aranda

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

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Resumen

SiO_x/Si -nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO₂ layers and affect the Si NCs layer giving place to SiO_x /Si NCs (1.64<x<2) interfaces. All as-grown samples showed strong photoluminescence (PL) bands in the visible and near-infrared regions; transmission electron microscopy measurements confirmed the presence of Si NCs. Thermal annealing at 1100 °C promoted the SiO ₂ stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.

Idioma original	Inglés
Número de artículo	094323
Publicación	Journal of Applied Physics
Volumen	108
N.º	9
DOI	https://doi.org/10.1063/1.3506424
Estado	Publicada - 1 nov. 2010
Publicado de forma externa	Sí

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title = "Photoluminescence of as-grown and thermal annealed SiOx/Si- nanocrystals heterolayers grown by reactive rf sputtering",

abstract = "SiOx/Si -nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO2 layers and affect the Si NCs layer giving place to SiOx /Si NCs (1.642 stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.",

author = "E. Mota-Pineda and M. Mel{\'e}ndez-Lira and M. Zapata-Torres and {Del Angel}, P. and A. P{\'e}rez-Centeno and S. Jim{\'e}nez-Sandoval and Santana-Aranda, {M. A.}",

note = "Funding Information: M.M.L. acknowledges the support from CONACyT during his sabbatical visit at CICATA-IPN. The technical support of M. Guerrero, A. Soto, A. Garcia-Sotelo, and C. Z{\'u}{\~n}iga-Romero is greatly acknowledged. This work was partially supported by CONACyT-Mexico.",

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T1 - Photoluminescence of as-grown and thermal annealed SiOx/Si- nanocrystals heterolayers grown by reactive rf sputtering

AU - Mota-Pineda, E.

AU - Meléndez-Lira, M.

AU - Zapata-Torres, M.

AU - Del Angel, P.

AU - Pérez-Centeno, A.

AU - Jiménez-Sandoval, S.

AU - Santana-Aranda, M. A.

N1 - Funding Information: M.M.L. acknowledges the support from CONACyT during his sabbatical visit at CICATA-IPN. The technical support of M. Guerrero, A. Soto, A. Garcia-Sotelo, and C. Zúñiga-Romero is greatly acknowledged. This work was partially supported by CONACyT-Mexico.

PY - 2010/11/1

Y1 - 2010/11/1

N2 - SiOx/Si -nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO2 layers and affect the Si NCs layer giving place to SiOx /Si NCs (1.642 stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.

AB - SiOx/Si -nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO2 layers and affect the Si NCs layer giving place to SiOx /Si NCs (1.642 stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.

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DO - 10.1063/1.3506424

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