Abstract
SiOx/Si -nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO2 layers and affect the Si NCs layer giving place to SiOx /Si NCs (1.64<x<2) interfaces. All as-grown samples showed strong photoluminescence (PL) bands in the visible and near-infrared regions; transmission electron microscopy measurements confirmed the presence of Si NCs. Thermal annealing at 1100 °C promoted the SiO 2 stoichiometry in the interface and the crystallization of more Si NCs. The results allow us to clearly identify the origin of the PL bands; indicating that the near-infrared emission is related to the nonstoichiometric oxide while the red and green bands are originated in Si NCs.
Original language | English |
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Article number | 094323 |
Journal | Journal of Applied Physics |
Volume | 108 |
Issue number | 9 |
DOIs | |
State | Published - 1 Nov 2010 |
Externally published | Yes |