Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy

Balint Pödör; Evgeniiy F. Venger; Tatyana G. Kryshtab; Galina N. Semenova; Peter M. Lytvyn; Mikhail P. Semtsiv

doi:10.1117/12.306213

Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy

Balint Pödör, Evgeniiy F. Venger, Tatyana G. Kryshtab, Galina N. Semenova, Peter M. Lytvyn, Mikhail P. Semtsiv

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

Resumen

The low-temperature photoluminescence and X-ray structural investigations of the properties of InP epilayers grown from indium melt with rare earth element dysprosium (Dy) addition are presented. The Dy addition influence on intensity, linewidth and spectral position of the near-band-gap emission and of vacancy-impurity bands at 0.75-1.1 eV is reported. The obtained data of the stoichiometry changes in InP epilayers grown with addition of Dy are considered. Low background doping level with free electron concentration below about 10¹⁴ cm^-3 at the room temperature for InP epilayers was achieved, that witnessed of the Dy strong gettering effect. It was also ascertained that Dy incorporated into the grown layers in various phases forms (like the inclusions) at lowest using concentration (C_L^Dy ∼ 0.01 at.%).

Idioma original	Inglés
Páginas (desde-hasta)	197-201
Número de páginas	5
Publicación	Proceedings of SPIE - The International Society for Optical Engineering
Volumen	3359
DOI	https://doi.org/10.1117/12.306213
Estado	Publicada - 1997
Publicado de forma externa	Sí
Evento	International Conference on Optical Diagnosis of Materials and Devices for Opto-, Micro and Quantum Electronics 1997 - Kiev, Ucrania Duración: 13 may. 1997 → 15 may. 1997

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@article{ed618445406e4f369099baa2d9e50e54,

title = "Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy",

abstract = "The low-temperature photoluminescence and X-ray structural investigations of the properties of InP epilayers grown from indium melt with rare earth element dysprosium (Dy) addition are presented. The Dy addition influence on intensity, linewidth and spectral position of the near-band-gap emission and of vacancy-impurity bands at 0.75-1.1 eV is reported. The obtained data of the stoichiometry changes in InP epilayers grown with addition of Dy are considered. Low background doping level with free electron concentration below about 1014 cm-3 at the room temperature for InP epilayers was achieved, that witnessed of the Dy strong gettering effect. It was also ascertained that Dy incorporated into the grown layers in various phases forms (like the inclusions) at lowest using concentration (CLDy ∼ 0.01 at.%).",

keywords = "Liquid phase epitaxy, Photoluminescence, Rare-earth additions, Stoichiometry",

author = "Balint P{\"o}d{\"o}r and Venger, {Evgeniiy F.} and Kryshtab, {Tatyana G.} and Semenova, {Galina N.} and Lytvyn, {Peter M.} and Semtsiv, {Mikhail P.}",

year = "1997",

doi = "10.1117/12.306213",

language = "Ingl{\'e}s",

volume = "3359",

pages = "197--201",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "International Conference on Optical Diagnosis of Materials and Devices for Opto-, Micro and Quantum Electronics 1997 ; Conference date: 13-05-1997 Through 15-05-1997",

}

Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy. / Pödör, Balint; Venger, Evgeniiy F.; Kryshtab, Tatyana G. et al.
En: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3359, 1997, p. 197-201.

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

TY - JOUR

T1 - Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy

AU - Pödör, Balint

AU - Venger, Evgeniiy F.

AU - Kryshtab, Tatyana G.

AU - Semenova, Galina N.

AU - Lytvyn, Peter M.

AU - Semtsiv, Mikhail P.

PY - 1997

Y1 - 1997

N2 - The low-temperature photoluminescence and X-ray structural investigations of the properties of InP epilayers grown from indium melt with rare earth element dysprosium (Dy) addition are presented. The Dy addition influence on intensity, linewidth and spectral position of the near-band-gap emission and of vacancy-impurity bands at 0.75-1.1 eV is reported. The obtained data of the stoichiometry changes in InP epilayers grown with addition of Dy are considered. Low background doping level with free electron concentration below about 1014 cm-3 at the room temperature for InP epilayers was achieved, that witnessed of the Dy strong gettering effect. It was also ascertained that Dy incorporated into the grown layers in various phases forms (like the inclusions) at lowest using concentration (CLDy ∼ 0.01 at.%).

AB - The low-temperature photoluminescence and X-ray structural investigations of the properties of InP epilayers grown from indium melt with rare earth element dysprosium (Dy) addition are presented. The Dy addition influence on intensity, linewidth and spectral position of the near-band-gap emission and of vacancy-impurity bands at 0.75-1.1 eV is reported. The obtained data of the stoichiometry changes in InP epilayers grown with addition of Dy are considered. Low background doping level with free electron concentration below about 1014 cm-3 at the room temperature for InP epilayers was achieved, that witnessed of the Dy strong gettering effect. It was also ascertained that Dy incorporated into the grown layers in various phases forms (like the inclusions) at lowest using concentration (CLDy ∼ 0.01 at.%).

KW - Liquid phase epitaxy

KW - Photoluminescence

KW - Rare-earth additions

KW - Stoichiometry

UR - http://www.scopus.com/inward/record.url?scp=0031393024&partnerID=8YFLogxK

U2 - 10.1117/12.306213

DO - 10.1117/12.306213

M3 - Artículo de la conferencia

AN - SCOPUS:0031393024

SN - 0277-786X

VL - 3359

SP - 197

EP - 201

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - International Conference on Optical Diagnosis of Materials and Devices for Opto-, Micro and Quantum Electronics 1997

Y2 - 13 May 1997 through 15 May 1997

ER -

Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy

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