Abstract
The low-temperature photoluminescence and X-ray structural investigations of the properties of InP epilayers grown from indium melt with rare earth element dysprosium (Dy) addition are presented. The Dy addition influence on intensity, linewidth and spectral position of the near-band-gap emission and of vacancy-impurity bands at 0.75-1.1 eV is reported. The obtained data of the stoichiometry changes in InP epilayers grown with addition of Dy are considered. Low background doping level with free electron concentration below about 1014 cm-3 at the room temperature for InP epilayers was achieved, that witnessed of the Dy strong gettering effect. It was also ascertained that Dy incorporated into the grown layers in various phases forms (like the inclusions) at lowest using concentration (CLDy ∼ 0.01 at.%).
Original language | English |
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Pages (from-to) | 197-201 |
Number of pages | 5 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3359 |
DOIs | |
State | Published - 1997 |
Externally published | Yes |
Event | International Conference on Optical Diagnosis of Materials and Devices for Opto-, Micro and Quantum Electronics 1997 - Kiev, Ukraine Duration: 13 May 1997 → 15 May 1997 |
Keywords
- Liquid phase epitaxy
- Photoluminescence
- Rare-earth additions
- Stoichiometry