Photoluminescence inhomogeneity and InAs QD laser structure parameters

J. L. Casas Espinola; G. Polupan

doi:10.1016/j.mseb.2010.03.016

Photoluminescence inhomogeneity and InAs QD laser structure parameters

Título traducido de la contribución: Inhomogeneidad de la fotoluminiscencia y parámetros de la estructura del láser InAs QD

J. L. Casas Espinola, G. Polupan

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

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Resumen

The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In_0.15Ga _0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.

Título traducido de la contribución	Inhomogeneidad de la fotoluminiscencia y parámetros de la estructura del láser InAs QD
Idioma original	Inglés
Páginas (desde-hasta)	266-268
Número de páginas	3
Publicación	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volumen	174
N.º	1-3
DOI	https://doi.org/10.1016/j.mseb.2010.03.016
Estado	Publicada - 25 oct. 2010

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@article{7da00163de3a42f3a77c26ebacd53134,

title = "Photoluminescence inhomogeneity and InAs QD laser structure parameters",

abstract = "The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga 0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.",

keywords = "Dot-in-a-well structures, Excitation power dependences, Photoluminescence",

author = "{Casas Espinola}, {J. L.} and G. Polupan",

year = "2010",

month = oct,

day = "25",

doi = "10.1016/j.mseb.2010.03.016",

language = "Ingl{\'e}s",

volume = "174",

pages = "266--268",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

number = "1-3",

}

TY - JOUR

T1 - Photoluminescence inhomogeneity and InAs QD laser structure parameters

AU - Casas Espinola, J. L.

AU - Polupan, G.

PY - 2010/10/25

Y1 - 2010/10/25

N2 - The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga 0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.

AB - The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga 0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.

KW - Dot-in-a-well structures

KW - Excitation power dependences

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=77956483701&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2010.03.016

DO - 10.1016/j.mseb.2010.03.016

M3 - Artículo

AN - SCOPUS:77956483701

SN - 0921-5107

VL - 174

SP - 266

EP - 268

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Photoluminescence inhomogeneity and InAs QD laser structure parameters

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