Photoluminescence inhomogeneity and InAs QD laser structure parameters

J. L. Casas Espinola; G. Polupan

doi:10.1016/j.mseb.2010.03.016

Photoluminescence inhomogeneity and InAs QD laser structure parameters

J. L. Casas Espinola, G. Polupan

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Abstract

The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In_0.15Ga _0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.

Translated title of the contribution	Inhomogeneidad de la fotoluminiscencia y parámetros de la estructura del láser InAs QD
Original language	English
Pages (from-to)	266-268
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2010.03.016
State	Published - 25 Oct 2010

Keywords

Dot-in-a-well structures
Excitation power dependences
Photoluminescence

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title = "Photoluminescence inhomogeneity and InAs QD laser structure parameters",

abstract = "The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga 0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.",

keywords = "Dot-in-a-well structures, Excitation power dependences, Photoluminescence",

author = "{Casas Espinola}, {J. L.} and G. Polupan",

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T1 - Photoluminescence inhomogeneity and InAs QD laser structure parameters

AU - Casas Espinola, J. L.

AU - Polupan, G.

PY - 2010/10/25

Y1 - 2010/10/25

N2 - The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga 0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.

AB - The photoluminescence (PL) and its power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In0.15Ga 0.85As/GaAs quantum wells (QWs) with different PL intensities and different shapes of PL spectra. It was shown that two reasons are responsible for the PL intensity inhomogeneity and different shapes of PL spectra in the studied structure. The first reason deals with the variation of QD concentrations and the second one related to the bimodal QD size distribution in DWELL. At the same time both types of QD ensembles are characterized by high QD quality.

KW - Dot-in-a-well structures

KW - Excitation power dependences

KW - Photoluminescence

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M3 - Artículo

AN - SCOPUS:77956483701

SN - 0921-5107

VL - 174

SP - 266

EP - 268

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Photoluminescence inhomogeneity and InAs QD laser structure parameters

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Keywords

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