Photoluminescence and photocurrent of Schottky diodes based on silicon nanocrystallites

Photoluminescence (PL), Raman scattering and atomic force microscopy (AFM) investigations have been done for porous silicon (PSi) in as-prepared state. The Schottky barrier to porous silicon layer and ohmic electrical contact to p-type Si substrate have been created. Photocurrent spectral response and reverse current-voltage characteristics in the dark and with light exposition have been investigated for these structures. The photoelectric parameters of Schottky barrier have been discussed from the point of view of variation of the sizes of Si nanocrystallites.