Photoluminescence and photocurrent of Schottky diodes based on silicon nanocrystallites

A. Vivas Hernandez; T. V. Torchynska; G. Polupan; S. Jimenez Sandoval; R. Pena Sierra; M. Estrada Cueto; G. R.Paredes Rubio

doi:10.1002/pssc.200460758

Photoluminescence and photocurrent of Schottky diodes based on silicon nanocrystallites

A. Vivas Hernandez, T. V. Torchynska, G. Polupan, S. Jimenez Sandoval, R. Pena Sierra, M. Estrada Cueto, G. R.Paredes Rubio

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Photoluminescence (PL), Raman scattering and atomic force microscopy (AFM) investigations have been done for porous silicon (PSi) in as-prepared state. The Schottky barrier to porous silicon layer and ohmic electrical contact to p-type Si substrate have been created. Photocurrent spectral response and reverse current-voltage characteristics in the dark and with light exposition have been investigated for these structures. The photoelectric parameters of Schottky barrier have been discussed from the point of view of variation of the sizes of Si nanocrystallites.

Original language	English
Pages (from-to)	3019-3022
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	8
DOIs	https://doi.org/10.1002/pssc.200460758
State	Published - 2005

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title = "Photoluminescence and photocurrent of Schottky diodes based on silicon nanocrystallites",

abstract = "Photoluminescence (PL), Raman scattering and atomic force microscopy (AFM) investigations have been done for porous silicon (PSi) in as-prepared state. The Schottky barrier to porous silicon layer and ohmic electrical contact to p-type Si substrate have been created. Photocurrent spectral response and reverse current-voltage characteristics in the dark and with light exposition have been investigated for these structures. The photoelectric parameters of Schottky barrier have been discussed from the point of view of variation of the sizes of Si nanocrystallites.",

author = "Hernandez, {A. Vivas} and Torchynska, {T. V.} and G. Polupan and Sandoval, {S. Jimenez} and Sierra, {R. Pena} and Cueto, {M. Estrada} and Rubio, {G. R.Paredes}",

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doi = "10.1002/pssc.200460758",

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TY - JOUR

T1 - Photoluminescence and photocurrent of Schottky diodes based on silicon nanocrystallites

AU - Hernandez, A. Vivas

AU - Torchynska, T. V.

AU - Polupan, G.

AU - Sandoval, S. Jimenez

AU - Sierra, R. Pena

AU - Cueto, M. Estrada

AU - Rubio, G. R.Paredes

PY - 2005

Y1 - 2005

N2 - Photoluminescence (PL), Raman scattering and atomic force microscopy (AFM) investigations have been done for porous silicon (PSi) in as-prepared state. The Schottky barrier to porous silicon layer and ohmic electrical contact to p-type Si substrate have been created. Photocurrent spectral response and reverse current-voltage characteristics in the dark and with light exposition have been investigated for these structures. The photoelectric parameters of Schottky barrier have been discussed from the point of view of variation of the sizes of Si nanocrystallites.

AB - Photoluminescence (PL), Raman scattering and atomic force microscopy (AFM) investigations have been done for porous silicon (PSi) in as-prepared state. The Schottky barrier to porous silicon layer and ohmic electrical contact to p-type Si substrate have been created. Photocurrent spectral response and reverse current-voltage characteristics in the dark and with light exposition have been investigated for these structures. The photoelectric parameters of Schottky barrier have been discussed from the point of view of variation of the sizes of Si nanocrystallites.

UR - http://www.scopus.com/inward/record.url?scp=27444433366&partnerID=8YFLogxK

U2 - 10.1002/pssc.200460758

DO - 10.1002/pssc.200460758

M3 - Artículo

AN - SCOPUS:27444433366

SN - 1610-1634

VL - 2

SP - 3019

EP - 3022

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 8

ER -

Photoluminescence and photocurrent of Schottky diodes based on silicon nanocrystallites

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