Photoluminescence and its excitation mechanisms in Si wires and dots

T. V. Torchynska; J. Aguilar-Hernandez; A. I. Diaz Cano; F. G. Becerril-Espinoza; Y. Goldstein; A. Many; J. Jedrzejewskii; L. Yu Khomenkova; B. M. Bulakh; L. V. Scherbina

doi:10.1002/pssa.200306530

Photoluminescence and its excitation mechanisms in Si wires and dots

Título traducido de la contribución: Fotoluminiscencia y sus mecanismos de excitación en hilos y puntos de Si

T. V. Torchynska, J. Aguilar-Hernandez, A. I. Diaz Cano, F. G. Becerril-Espinoza, Y. Goldstein, A. Many, J. Jedrzejewskii, L. Yu Khomenkova, B. M. Bulakh, L. V. Scherbina

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

3 Citas (Scopus)

Resumen

Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.

Título traducido de la contribución	Fotoluminiscencia y sus mecanismos de excitación en hilos y puntos de Si
Idioma original	Inglés
Páginas (desde-hasta)	382-387
Número de páginas	6
Publicación	Physica Status Solidi (A) Applied Research
Volumen	197
N.º	2
DOI	https://doi.org/10.1002/pssa.200306530
Estado	Publicada - may. 2003
Evento	Proceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology - Puerto de la Cruz, Espana Duración: 10 mar. 2002 → 15 mar. 2002

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title = "Photoluminescence and its excitation mechanisms in Si wires and dots",

abstract = "Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. {"}Red{"} (1.6-1.7 eV) and {"}orange{"} (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.",

author = "Torchynska, {T. V.} and J. Aguilar-Hernandez and {Diaz Cano}, {A. I.} and Becerril-Espinoza, {F. G.} and Y. Goldstein and A. Many and J. Jedrzejewskii and Khomenkova, {L. Yu} and Bulakh, {B. M.} and Scherbina, {L. V.}",

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pages = "382--387",

journal = "Physica Status Solidi (A) Applied Research",

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TY - JOUR

T1 - Photoluminescence and its excitation mechanisms in Si wires and dots

AU - Torchynska, T. V.

AU - Aguilar-Hernandez, J.

AU - Diaz Cano, A. I.

AU - Becerril-Espinoza, F. G.

AU - Goldstein, Y.

AU - Many, A.

AU - Jedrzejewskii, J.

AU - Khomenkova, L. Yu

AU - Bulakh, B. M.

AU - Scherbina, L. V.

PY - 2003/5

Y1 - 2003/5

N2 - Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.

AB - Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.

UR - http://www.scopus.com/inward/record.url?scp=0038207870&partnerID=8YFLogxK

U2 - 10.1002/pssa.200306530

DO - 10.1002/pssa.200306530

M3 - Artículo de la conferencia

AN - SCOPUS:0038207870

SN - 0031-8965

VL - 197

SP - 382

EP - 387

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

T2 - Proceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology

Y2 - 10 March 2002 through 15 March 2002

ER -

Photoluminescence and its excitation mechanisms in Si wires and dots

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