Abstract
Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.
Translated title of the contribution | Fotoluminiscencia y sus mecanismos de excitación en hilos y puntos de Si |
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Original language | English |
Pages (from-to) | 382-387 |
Number of pages | 6 |
Journal | Physica Status Solidi (A) Applied Research |
Volume | 197 |
Issue number | 2 |
DOIs | |
State | Published - May 2003 |
Event | Proceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology - Puerto de la Cruz, Spain Duration: 10 Mar 2002 → 15 Mar 2002 |