Photoluminescence and its excitation mechanisms in Si wires and dots

T. V. Torchynska, J. Aguilar-Hernandez, A. I. Diaz Cano, F. G. Becerril-Espinoza, Y. Goldstein, A. Many, J. Jedrzejewskii, L. Yu Khomenkova, B. M. Bulakh, L. V. Scherbina

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Investigations of photoluminescence, its temperature dependence, Raman scattering and IR absorption spectra were done for the study of the photoluminescence mechanism in porous silicon and Si enriched silicon oxide films. "Red" (1.6-1.7 eV) and "orange" (1.9-2.2 eV) photoluminescence bands are observed in both objects. Comparative investigations indicate than an oxide defect related mechanism is involved in the emission of PL bands in Si wires and silicon oxide films. Photoluminescence excitation mechanisms are discussed as well.

Translated title of the contributionFotoluminiscencia y sus mecanismos de excitación en hilos y puntos de Si
Original languageEnglish
Pages (from-to)382-387
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume197
Issue number2
DOIs
StatePublished - May 2003
EventProceedings of The 3rd International Conference Porous Semiconductors - Sience and Technology - Puerto de la Cruz, Spain
Duration: 10 Mar 200215 Mar 2002

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