@inproceedings{8ac9f1a26f934262b8aade8bc8470614,
title = "Parasitic electrostatic capacitances in Si/SiGe n-HFET",
abstract = "The influence of parasitic capacitance on high frequency performances of SiGe n-HFET is reported. These capacitances due to fringe effect and electrostatic contribution of the gate are extracted from HF measurement and estimated with a 2D hydrodynamic modeling of the device and with a 2D electrostatic modeling of the HFET. These capacitances lower the intrinsic transit frequency in between 30-38% for the samples reported here. copyright The Electrochemical Society.",
author = "N. Zerounian and M. Enciso-Aguilar and T. Hackbarth and Herzog, {H. J.} and F. Aniel",
year = "2006",
doi = "10.1149/1.2355893",
language = "Ingl{\'e}s",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "989--999",
booktitle = "SiGe and Ge",
edition = "7",
note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}