Oxidation process effects on porous silicon photoluminescence

T. V. Torchinskaya; N. E. Korsunskaya; M. K. Sheinkman; L. Yu Khomenkova; A. L. Kapitanchuk; Ye Goldstein; E. Savir; A. Many

Oxidation process effects on porous silicon photoluminescence

T. V. Torchinskaya, N. E. Korsunskaya, M. K. Sheinkman, L. Yu Khomenkova, A. L. Kapitanchuk, Ye Goldstein, E. Savir, A. Many

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3 Citas (Scopus)

Resumen

The effect of preparation regimes on the oxide composition, the number of dangling bonds and photoluminescence spectra have been investigated. The influence of the oxidation process during additional anodization of porous silicon in NaCl electrolyte on photo- and electroluminescence spectra have been studied also.

Idioma original	Inglés
Páginas	451-454
Número de páginas	4
Estado	Publicada - 1998
Publicado de forma externa	Sí
Evento	Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2) - Sinaia, Romania Duración: 6 oct. 1998 → 10 oct. 1998

Conferencia

Conferencia	Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2)
Ciudad	Sinaia, Romania
Período	6/10/98 → 10/10/98

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@conference{3e86927cc3a140febb0acbea9ddc48af,

title = "Oxidation process effects on porous silicon photoluminescence",

abstract = "The effect of preparation regimes on the oxide composition, the number of dangling bonds and photoluminescence spectra have been investigated. The influence of the oxidation process during additional anodization of porous silicon in NaCl electrolyte on photo- and electroluminescence spectra have been studied also.",

author = "Torchinskaya, {T. V.} and Korsunskaya, {N. E.} and Sheinkman, {M. K.} and Khomenkova, {L. Yu} and Kapitanchuk, {A. L.} and Ye Goldstein and E. Savir and A. Many",

year = "1998",

language = "Ingl{\'e}s",

pages = "451--454",

note = "Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2) ; Conference date: 06-10-1998 Through 10-10-1998",

}

TY - CONF

T1 - Oxidation process effects on porous silicon photoluminescence

AU - Torchinskaya, T. V.

AU - Korsunskaya, N. E.

AU - Sheinkman, M. K.

AU - Khomenkova, L. Yu

AU - Kapitanchuk, A. L.

AU - Goldstein, Ye

AU - Savir, E.

AU - Many, A.

PY - 1998

Y1 - 1998

N2 - The effect of preparation regimes on the oxide composition, the number of dangling bonds and photoluminescence spectra have been investigated. The influence of the oxidation process during additional anodization of porous silicon in NaCl electrolyte on photo- and electroluminescence spectra have been studied also.

AB - The effect of preparation regimes on the oxide composition, the number of dangling bonds and photoluminescence spectra have been investigated. The influence of the oxidation process during additional anodization of porous silicon in NaCl electrolyte on photo- and electroluminescence spectra have been studied also.

UR - http://www.scopus.com/inward/record.url?scp=0032310099&partnerID=8YFLogxK

M3 - Artículo

SP - 451

EP - 454

T2 - Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2)

Y2 - 6 October 1998 through 10 October 1998

ER -

Oxidation process effects on porous silicon photoluminescence

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