Oxidation process effects on porous silicon photoluminescence

T. V. Torchinskaya, N. E. Korsunskaya, M. K. Sheinkman, L. Yu Khomenkova, A. L. Kapitanchuk, Ye Goldstein, E. Savir, A. Many

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

The effect of preparation regimes on the oxide composition, the number of dangling bonds and photoluminescence spectra have been investigated. The influence of the oxidation process during additional anodization of porous silicon in NaCl electrolyte on photo- and electroluminescence spectra have been studied also.

Original languageEnglish
Pages451-454
Number of pages4
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2) - Sinaia, Romania
Duration: 6 Oct 199810 Oct 1998

Conference

ConferenceProceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2)
CitySinaia, Romania
Period6/10/9810/10/98

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