Optical and structural characterization of antimony doped zinc oxide single crystal

G. Juarez-Diaz; R. Pena-Sierra; J. Diaz-Reyes; J. Martinez-Juarez; J. Contreras-Rascon

doi:10.1109/ICEEE.2013.6676086

Optical and structural characterization of antimony doped zinc oxide single crystal

G. Juarez-Diaz, R. Pena-Sierra, J. Diaz-Reyes, J. Martinez-Juarez, J. Contreras-Rascon

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

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Resumen

The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb₂O₃ crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.

Idioma original	Inglés
Páginas	411-414
Número de páginas	4
DOI	https://doi.org/10.1109/ICEEE.2013.6676086
Estado	Publicada - 2013
Evento	2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013 - Mexico City, México Duración: 30 sep. 2013 → 4 oct. 2013

Conferencia

Conferencia	2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013
País/Territorio	México
Ciudad	Mexico City
Período	30/09/13 → 4/10/13

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10.1109/ICEEE.2013.6676086

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Juarez-Diaz, G., Pena-Sierra, R., Diaz-Reyes, J., Martinez-Juarez, J., & Contreras-Rascon, J. (2013). Optical and structural characterization of antimony doped zinc oxide single crystal. 411-414. Papel presentado en 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013, Mexico City, México. https://doi.org/10.1109/ICEEE.2013.6676086

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title = "Optical and structural characterization of antimony doped zinc oxide single crystal",

abstract = "The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb2O3 crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.",

keywords = "antimony diffusion, high x-ray diffraction, reciprocal space maps, zinc oxide",

author = "G. Juarez-Diaz and R. Pena-Sierra and J. Diaz-Reyes and J. Martinez-Juarez and J. Contreras-Rascon",

year = "2013",

doi = "10.1109/ICEEE.2013.6676086",

language = "Ingl{\'e}s",

pages = "411--414",

note = "2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013 ; Conference date: 30-09-2013 Through 04-10-2013",

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Juarez-Diaz, G, Pena-Sierra, R, Diaz-Reyes, J, Martinez-Juarez, J & Contreras-Rascon, J 2013, 'Optical and structural characterization of antimony doped zinc oxide single crystal', Papel presentado en 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013, Mexico City, México, 30/09/13 - 4/10/13 pp. 411-414. https://doi.org/10.1109/ICEEE.2013.6676086

Optical and structural characterization of antimony doped zinc oxide single crystal. / Juarez-Diaz, G.; Pena-Sierra, R.; Diaz-Reyes, J. et al.
2013. 411-414 Papel presentado en 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013, Mexico City, México.

Producción científica: Contribución a una conferencia › Artículo › revisión exhaustiva

TY - CONF

T1 - Optical and structural characterization of antimony doped zinc oxide single crystal

AU - Juarez-Diaz, G.

AU - Pena-Sierra, R.

AU - Diaz-Reyes, J.

AU - Martinez-Juarez, J.

AU - Contreras-Rascon, J.

PY - 2013

Y1 - 2013

N2 - The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb2O3 crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.

AB - The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb2O3 crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.

KW - antimony diffusion

KW - high x-ray diffraction

KW - reciprocal space maps

KW - zinc oxide

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DO - 10.1109/ICEEE.2013.6676086

M3 - Artículo

SP - 411

EP - 414

T2 - 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013

Y2 - 30 September 2013 through 4 October 2013

ER -

Optical and structural characterization of antimony doped zinc oxide single crystal

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