Optical and structural characterization of antimony doped zinc oxide single crystal

G. Juarez-Diaz; R. Pena-Sierra; J. Diaz-Reyes; J. Martinez-Juarez; J. Contreras-Rascon

doi:10.1109/ICEEE.2013.6676086

Optical and structural characterization of antimony doped zinc oxide single crystal

G. Juarez-Diaz, R. Pena-Sierra, J. Diaz-Reyes, J. Martinez-Juarez, J. Contreras-Rascon

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Contribution to conference › Paper › peer-review

Abstract

The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb₂O₃ crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.

Original language	English
Pages	411-414
Number of pages	4
DOIs	https://doi.org/10.1109/ICEEE.2013.6676086
State	Published - 2013
Event	2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013 - Mexico City, Mexico Duration: 30 Sep 2013 → 4 Oct 2013

Conference

Conference	2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013
Country/Territory	Mexico
City	Mexico City
Period	30/09/13 → 4/10/13

Keywords

antimony diffusion
high x-ray diffraction
reciprocal space maps
zinc oxide

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10.1109/ICEEE.2013.6676086

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Juarez-Diaz, G., Pena-Sierra, R., Diaz-Reyes, J., Martinez-Juarez, J., & Contreras-Rascon, J. (2013). Optical and structural characterization of antimony doped zinc oxide single crystal. 411-414. Paper presented at 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013, Mexico City, Mexico. https://doi.org/10.1109/ICEEE.2013.6676086

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abstract = "The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb2O3 crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.",

keywords = "antimony diffusion, high x-ray diffraction, reciprocal space maps, zinc oxide",

author = "G. Juarez-Diaz and R. Pena-Sierra and J. Diaz-Reyes and J. Martinez-Juarez and J. Contreras-Rascon",

year = "2013",

doi = "10.1109/ICEEE.2013.6676086",

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pages = "411--414",

note = "2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013 ; Conference date: 30-09-2013 Through 04-10-2013",

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Juarez-Diaz, G, Pena-Sierra, R, Diaz-Reyes, J, Martinez-Juarez, J & Contreras-Rascon, J 2013, 'Optical and structural characterization of antimony doped zinc oxide single crystal', Paper presented at 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013, Mexico City, Mexico, 30/09/13 - 4/10/13 pp. 411-414. https://doi.org/10.1109/ICEEE.2013.6676086

Optical and structural characterization of antimony doped zinc oxide single crystal. / Juarez-Diaz, G.; Pena-Sierra, R.; Diaz-Reyes, J. et al.
2013. 411-414 Paper presented at 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013, Mexico City, Mexico.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Optical and structural characterization of antimony doped zinc oxide single crystal

AU - Juarez-Diaz, G.

AU - Pena-Sierra, R.

AU - Diaz-Reyes, J.

AU - Martinez-Juarez, J.

AU - Contreras-Rascon, J.

PY - 2013

Y1 - 2013

N2 - The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb2O3 crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.

AB - The optical and structural study of the antimony doping in zinc oxide (ZnO) single crystal (001) performed by atomic diffusion is presented. Diffusion was carried out with a temperature of 1000C for periods of 1 and 2 hrs from a solid source prepared by partial oxidation of antimony, characterization of each step process was performed by photoluminescence (PL), x-ray diffraction (XRD) and high resolution x-ray diffraction (HRXRD). The characterization by PL shows the effect of antimony doping on the emission band intensity attributed to reduction of oxygen vacancies by antimony introduction. The results of XRD showed that antimony source has a Sb2O3 crystalline phase. Reciprocal space maps of doped samples revealed the low dimensional structural modification of single crystal produced by the introduction of antimony. Results indicate that antimony is introduced fully into surface of ZnO and produce low dimensional changes on structure.

KW - antimony diffusion

KW - high x-ray diffraction

KW - reciprocal space maps

KW - zinc oxide

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DO - 10.1109/ICEEE.2013.6676086

M3 - Artículo

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EP - 414

T2 - 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013

Y2 - 30 September 2013 through 4 October 2013

ER -

Optical and structural characterization of antimony doped zinc oxide single crystal

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