Optical and electrical properties of p-type AgInSnxS 2-x (x = 0-0.04) thin films prepared by spray pyrolysis

M. L. Albor-Aguilera; J. J. Cayente-Romero; J. M. Peza-Tapia; L. R. De León-Gutiérrez; M. Ortega-López

doi:10.1016/j.tsf.2005.04.050

Optical and electrical properties of p-type AgInSn_xS _2-x (x = 0-0.04) thin films prepared by spray pyrolysis

M. L. Albor-Aguilera, J. J. Cayente-Romero, J. M. Peza-Tapia, L. R. De León-Gutiérrez, M. Ortega-López

Escuela Superior de Física y Matemáticas (ESFM)

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

11 Citas (Scopus)

Resumen

AgInSn_xS_2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS ₂. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSn_xS_2-x (x < 0.2) resemble those of chalcopyrite AgInS₂. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSn_xS_2-x (x < 2) thin films.

Idioma original	Inglés
Páginas (desde-hasta)	168-172
Número de páginas	5
Publicación	Thin Solid Films
Volumen	490
N.º	2
DOI	https://doi.org/10.1016/j.tsf.2005.04.050
Estado	Publicada - 1 nov. 2005
Evento	IMRC 2004 - Duración: 22 ago. 2004 → 26 ago. 2004

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10.1016/j.tsf.2005.04.050

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title = "Optical and electrical properties of p-type AgInSnxS 2-x (x = 0-0.04) thin films prepared by spray pyrolysis",

abstract = "AgInSnxS2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS 2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSnxS2-x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2-x (x < 2) thin films.",

keywords = "AgInSnS, Optical and electrical properties, Thin films",

author = "Albor-Aguilera, {M. L.} and Cayente-Romero, {J. J.} and Peza-Tapia, {J. M.} and {De Le{\'o}n-Guti{\'e}rrez}, {L. R.} and M. Ortega-L{\'o}pez",

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T1 - Optical and electrical properties of p-type AgInSnxS 2-x (x = 0-0.04) thin films prepared by spray pyrolysis

AU - Albor-Aguilera, M. L.

AU - Cayente-Romero, J. J.

AU - Peza-Tapia, J. M.

AU - De León-Gutiérrez, L. R.

AU - Ortega-López, M.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - AgInSnxS2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS 2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSnxS2-x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2-x (x < 2) thin films.

AB - AgInSnxS2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS 2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSnxS2-x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2-x (x < 2) thin films.

KW - AgInSnS

KW - Optical and electrical properties

KW - Thin films

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U2 - 10.1016/j.tsf.2005.04.050

DO - 10.1016/j.tsf.2005.04.050

M3 - Artículo de la conferencia

AN - SCOPUS:24044541394

SN - 0040-6090

VL - 490

SP - 168

EP - 172

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

T2 - IMRC 2004

Y2 - 22 August 2004 through 26 August 2004

ER -