Optical and electrical properties of p-type AgInSnxS 2-x (x = 0-0.04) thin films prepared by spray pyrolysis

M. L. Albor-Aguilera; J. J. Cayente-Romero; J. M. Peza-Tapia; L. R. De León-Gutiérrez; M. Ortega-López

doi:10.1016/j.tsf.2005.04.050

Optical and electrical properties of p-type AgInSn_xS _2-x (x = 0-0.04) thin films prepared by spray pyrolysis

M. L. Albor-Aguilera, J. J. Cayente-Romero, J. M. Peza-Tapia, L. R. De León-Gutiérrez, M. Ortega-López

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

AgInSn_xS_2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS ₂. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSn_xS_2-x (x < 0.2) resemble those of chalcopyrite AgInS₂. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSn_xS_2-x (x < 2) thin films.

Original language	English
Pages (from-to)	168-172
Number of pages	5
Journal	Thin Solid Films
Volume	490
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2005.04.050
State	Published - 1 Nov 2005
Event	IMRC 2004 - Duration: 22 Aug 2004 → 26 Aug 2004

Keywords

AgInSnS
Optical and electrical properties
Thin films

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10.1016/j.tsf.2005.04.050

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title = "Optical and electrical properties of p-type AgInSnxS 2-x (x = 0-0.04) thin films prepared by spray pyrolysis",

abstract = "AgInSnxS2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS 2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSnxS2-x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2-x (x < 2) thin films.",

keywords = "AgInSnS, Optical and electrical properties, Thin films",

author = "Albor-Aguilera, {M. L.} and Cayente-Romero, {J. J.} and Peza-Tapia, {J. M.} and {De Le{\'o}n-Guti{\'e}rrez}, {L. R.} and M. Ortega-L{\'o}pez",

year = "2005",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2005.04.050",

language = "Ingl{\'e}s",

volume = "490",

pages = "168--172",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Optical and electrical properties of p-type AgInSnxS 2-x (x = 0-0.04) thin films prepared by spray pyrolysis

AU - Albor-Aguilera, M. L.

AU - Cayente-Romero, J. J.

AU - Peza-Tapia, J. M.

AU - De León-Gutiérrez, L. R.

AU - Ortega-López, M.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - AgInSnxS2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS 2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSnxS2-x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2-x (x < 2) thin films.

AB - AgInSnxS2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 °C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS 2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 °C, otherwise they are n-type. The optical properties of AgInSnxS2-x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2-x (x < 2) thin films.

KW - AgInSnS

KW - Optical and electrical properties

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=24044541394&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.04.050

DO - 10.1016/j.tsf.2005.04.050

M3 - Artículo de la conferencia

AN - SCOPUS:24044541394

SN - 0040-6090

VL - 490

SP - 168

EP - 172

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

T2 - IMRC 2004

Y2 - 22 August 2004 through 26 August 2004

ER -

Optical and electrical properties of p-type AgInSn_xS _2-x (x = 0-0.04) thin films prepared by spray pyrolysis

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Keywords

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