Resumen
The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 1013 cm- 3, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 1015 cm- 3. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.
Idioma original | Inglés |
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Páginas (desde-hasta) | 7013-7015 |
Número de páginas | 3 |
Publicación | Thin Solid Films |
Volumen | 516 |
N.º | 20 |
DOI | |
Estado | Publicada - 30 ago. 2008 |