On the doping problem of CdTe films: The bismuth case

O. Vigil-Galán; M. Brown; C. M. Ruiz; M. A. Vidal-Borbolla; R. Ramírez-Bon; E. Sánchez-Meza; M. Tufiño-Velázquez; M. Estela Calixto; A. D. Compaan; G. Contreras-Puente

doi:10.1016/j.tsf.2007.12.010

On the doping problem of CdTe films: The bismuth case

O. Vigil-Galán, M. Brown, C. M. Ruiz, M. A. Vidal-Borbolla, R. Ramírez-Bon, E. Sánchez-Meza, M. Tufiño-Velázquez, M. Estela Calixto, A. D. Compaan, G. Contreras-Puente

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10¹³ cm^{- 3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10¹⁵ cm^{- 3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

Original language	English
Pages (from-to)	7013-7015
Number of pages	3
Journal	Thin Solid Films
Volume	516
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2007.12.010
State	Published - 30 Aug 2008

Keywords

Bismuth doping
CdTe
Thin films

Access to Document

10.1016/j.tsf.2007.12.010

Cite this

@article{833ceaea7bd844fbab45558ba90c2cd0,

title = "On the doping problem of CdTe films: The bismuth case",

abstract = "The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 1013 cm- 3, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 1015 cm- 3. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.",

keywords = "Bismuth doping, CdTe, Thin films",

author = "O. Vigil-Gal{\'a}n and M. Brown and Ruiz, {C. M.} and Vidal-Borbolla, {M. A.} and R. Ram{\'i}rez-Bon and E. S{\'a}nchez-Meza and M. Tufi{\~n}o-Vel{\'a}zquez and Calixto, {M. Estela} and Compaan, {A. D.} and G. Contreras-Puente",

note = "Funding Information: Work partially supported by CONACYT-M{\'e}xico under grant number 47587.",

year = "2008",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2007.12.010",

language = "Ingl{\'e}s",

volume = "516",

pages = "7013--7015",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "20",

}

TY - JOUR

T1 - On the doping problem of CdTe films

T2 - The bismuth case

AU - Vigil-Galán, O.

AU - Brown, M.

AU - Ruiz, C. M.

AU - Vidal-Borbolla, M. A.

AU - Ramírez-Bon, R.

AU - Sánchez-Meza, E.

AU - Tufiño-Velázquez, M.

AU - Calixto, M. Estela

AU - Compaan, A. D.

AU - Contreras-Puente, G.

N1 - Funding Information: Work partially supported by CONACYT-México under grant number 47587.

PY - 2008/8/30

Y1 - 2008/8/30

N2 - The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 1013 cm- 3, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 1015 cm- 3. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

AB - The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 1013 cm- 3, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 1015 cm- 3. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

KW - Bismuth doping

KW - CdTe

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=45849124666&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.12.010

DO - 10.1016/j.tsf.2007.12.010

M3 - Artículo

SN - 0040-6090

VL - 516

SP - 7013

EP - 7015

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

ER -

On the doping problem of CdTe films: The bismuth case

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this