Ohmic contacts with palladium diffusion barrier on III-V semiconductors

M. Galván-Arellano; J. Díaz-Reyes; R. Peña-Sierra

doi:10.1016/j.vacuum.2009.10.024

Ohmic contacts with palladium diffusion barrier on III-V semiconductors

M. Galván-Arellano, J. Díaz-Reyes, R. Peña-Sierra

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

6 Citas (Scopus)

Resumen

Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).

Idioma original	Inglés
Páginas (desde-hasta)	1195-1198
Número de páginas	4
Publicación	Vacuum
Volumen	84
N.º	10
DOI	https://doi.org/10.1016/j.vacuum.2009.10.024
Estado	Publicada - 19 may. 2010

Acceder al documento

10.1016/j.vacuum.2009.10.024

Otros archivos y enlaces

Enlace a la publicación en Scopus

Citar esto

@article{c87e8c5c440e48bab7d352d2b4c86aaf,

title = "Ohmic contacts with palladium diffusion barrier on III-V semiconductors",

abstract = "Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by {"}electroless{"} deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).",

keywords = "Diffusion barriers, GaAs, III-V semiconductors, Ohmic contacts, Palladium, SIMS, Transmission line method (TLM)",

author = "M. Galv{\'a}n-Arellano and J. D{\'i}az-Reyes and R. Pe{\~n}a-Sierra",

year = "2010",

month = may,

day = "19",

doi = "10.1016/j.vacuum.2009.10.024",

language = "Ingl{\'e}s",

volume = "84",

pages = "1195--1198",

journal = "Vacuum",

issn = "0042-207X",

number = "10",

}

TY - JOUR

T1 - Ohmic contacts with palladium diffusion barrier on III-V semiconductors

AU - Galván-Arellano, M.

AU - Díaz-Reyes, J.

AU - Peña-Sierra, R.

PY - 2010/5/19

Y1 - 2010/5/19

N2 - Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).

AB - Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).

KW - Diffusion barriers

KW - GaAs

KW - III-V semiconductors

KW - Ohmic contacts

KW - Palladium

KW - SIMS

KW - Transmission line method (TLM)

UR - http://www.scopus.com/inward/record.url?scp=77953322117&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2009.10.024

DO - 10.1016/j.vacuum.2009.10.024

M3 - Artículo

SN - 0042-207X

VL - 84

SP - 1195

EP - 1198

JO - Vacuum

JF - Vacuum

IS - 10

ER -

Ohmic contacts with palladium diffusion barrier on III-V semiconductors

Resumen

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto