Ohmic contacts with palladium diffusion barrier on III-V semiconductors

M. Galván-Arellano; J. Díaz-Reyes; R. Peña-Sierra

doi:10.1016/j.vacuum.2009.10.024

Ohmic contacts with palladium diffusion barrier on III-V semiconductors

M. Galván-Arellano, J. Díaz-Reyes, R. Peña-Sierra

Centro de Investigación en Biotecnología Aplicada (CIBA), Unidad Tlaxcala

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).

Original language	English
Pages (from-to)	1195-1198
Number of pages	4
Journal	Vacuum
Volume	84
Issue number	10
DOIs	https://doi.org/10.1016/j.vacuum.2009.10.024
State	Published - 19 May 2010

Keywords

Diffusion barriers
GaAs
III-V semiconductors
Ohmic contacts
Palladium
SIMS
Transmission line method (TLM)

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10.1016/j.vacuum.2009.10.024

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title = "Ohmic contacts with palladium diffusion barrier on III-V semiconductors",

abstract = "Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by {"}electroless{"} deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).",

keywords = "Diffusion barriers, GaAs, III-V semiconductors, Ohmic contacts, Palladium, SIMS, Transmission line method (TLM)",

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T1 - Ohmic contacts with palladium diffusion barrier on III-V semiconductors

AU - Galván-Arellano, M.

AU - Díaz-Reyes, J.

AU - Peña-Sierra, R.

PY - 2010/5/19

Y1 - 2010/5/19

N2 - Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).

AB - Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM).

KW - Diffusion barriers

KW - GaAs

KW - III-V semiconductors

KW - Ohmic contacts

KW - Palladium

KW - SIMS

KW - Transmission line method (TLM)

UR - http://www.scopus.com/inward/record.url?scp=77953322117&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2009.10.024

DO - 10.1016/j.vacuum.2009.10.024

M3 - Artículo

SN - 0042-207X

VL - 84

SP - 1195

EP - 1198

JO - Vacuum

JF - Vacuum

IS - 10

ER -

Ohmic contacts with palladium diffusion barrier on III-V semiconductors

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Keywords

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