Morphology and composition of Ga and in co-doped ZnO nanocrystals films

Brahim El Filali, Tetyana Torchynska, Jorge L. Ramirez Garcia, Erick Velazquez Lozada, Lyudmyla Shcherbyna

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

2 Citas (Scopus)

Resumen

The impact of double donor doping on the morphology and film compositions has been studied in the ZnO:Ga:In films. The films were deposited by ultrasonic spray pyrolysis on a cleaned silicon substrate. To the study of double donor doping the In content was chosen 1at% and the Ga contents were varied in the range 0.5-3.0at.%. To stimulate the crystallization, the films were annealed at 400oC for 2 hours in nitrogen flow 5 l/min. The high-quality nanocrystal (NC) films with the planar morphology and the chemical composition correlated with the technological content were obtained for the 1.5at%Ga and 1.0at%In contents in the ZnO films. The variation nonmonotonical of the morphology and compositions in the studied films has been detected and discussed.

Idioma originalInglés
Título de la publicación alojada239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - Wide Bandgap Semiconductor Materials and Devices 22
EditoresV. Chakrapani, J. K. Hite, J. Zavada, T. Anderson, M. Tadjer, S. H. Kilgore
EditorialIOP Publishing Ltd.
Páginas121-125
Número de páginas5
Edición3
ISBN (versión digital)9781607689164
DOI
EstadoPublicada - 2021
Evento239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - Chicago, Estados Unidos
Duración: 30 may. 20213 jun. 2021

Serie de la publicación

NombreECS Transactions
Número3
Volumen102
ISSN (versión impresa)1938-6737
ISSN (versión digital)1938-5862

Conferencia

Conferencia239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021
País/TerritorioEstados Unidos
CiudadChicago
Período30/05/213/06/21

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