Morphology and composition of Ga and in co-doped ZnO nanocrystals films

Brahim El Filali, Tetyana Torchynska, Jorge L. Ramirez Garcia, Erick Velazquez Lozada, Lyudmyla Shcherbyna

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The impact of double donor doping on the morphology and film compositions has been studied in the ZnO:Ga:In films. The films were deposited by ultrasonic spray pyrolysis on a cleaned silicon substrate. To the study of double donor doping the In content was chosen 1at% and the Ga contents were varied in the range 0.5-3.0at.%. To stimulate the crystallization, the films were annealed at 400oC for 2 hours in nitrogen flow 5 l/min. The high-quality nanocrystal (NC) films with the planar morphology and the chemical composition correlated with the technological content were obtained for the 1.5at%Ga and 1.0at%In contents in the ZnO films. The variation nonmonotonical of the morphology and compositions in the studied films has been detected and discussed.

Original languageEnglish
Title of host publication239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - Wide Bandgap Semiconductor Materials and Devices 22
EditorsV. Chakrapani, J. K. Hite, J. Zavada, T. Anderson, M. Tadjer, S. H. Kilgore
PublisherIOP Publishing Ltd.
Pages121-125
Number of pages5
Edition3
ISBN (Electronic)9781607689164
DOIs
StatePublished - 2021
Event239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - Chicago, United States
Duration: 30 May 20213 Jun 2021

Publication series

NameECS Transactions
Number3
Volume102
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021
Country/TerritoryUnited States
CityChicago
Period30/05/213/06/21

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