MEMS capacitive sensor using FGMOS

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7 Citas (Scopus)

Resumen

In this paper, a capacitance structure configured with two plates to be used as a MEMS-sensor is presented. This capacitor was designed primarily for being used in combination with a floating-gate MOS transistor (FGMOS) as the transducer device of an accelerometer. One of the plates of this capacitance structure is fixed and the other plate will move when a force is applied, causing a variable capacitance, this is achieved by a lateral comb configuration. This variable capacitance depends either on the mechanical properties of the material used in the structure, the undesired displacement caused by gravity and pull-in effect. Furthermore, the proposed design can be fabricated using standard CMOS technologies followed by a sacrificial layer etching needed for the structure release.

Idioma originalInglés
Páginas421-426
Número de páginas6
DOI
EstadoPublicada - 1 ene 2013
Evento2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013 - Mexico City, México
Duración: 30 sep 20134 oct 2013

Conferencia

Conferencia2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013
País/TerritorioMéxico
CiudadMexico City
Período30/09/134/10/13

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