MEMS capacitive sensor using FGMOS

G. S. Abarca-Jimenez; M. A. Reyes-Barranca; S. Mendoza-Acevedo

doi:10.1109/ICEEE.2013.6676083

MEMS capacitive sensor using FGMOS

G. S. Abarca-Jimenez, M. A. Reyes-Barranca, S. Mendoza-Acevedo

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

In this paper, a capacitance structure configured with two plates to be used as a MEMS-sensor is presented. This capacitor was designed primarily for being used in combination with a floating-gate MOS transistor (FGMOS) as the transducer device of an accelerometer. One of the plates of this capacitance structure is fixed and the other plate will move when a force is applied, causing a variable capacitance, this is achieved by a lateral comb configuration. This variable capacitance depends either on the mechanical properties of the material used in the structure, the undesired displacement caused by gravity and pull-in effect. Furthermore, the proposed design can be fabricated using standard CMOS technologies followed by a sacrificial layer etching needed for the structure release.

Original language	English
Pages	421-426
Number of pages	6
DOIs	https://doi.org/10.1109/ICEEE.2013.6676083
State	Published - 1 Jan 2013
Event	2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013 - Mexico City, Mexico Duration: 30 Sep 2013 → 4 Oct 2013

Conference

Conference	2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013
Country/Territory	Mexico
City	Mexico City
Period	30/09/13 → 4/10/13

Keywords

Floating-gate MOS
mechanical properties
MEMS

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10.1109/ICEEE.2013.6676083

Cite this

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abstract = "In this paper, a capacitance structure configured with two plates to be used as a MEMS-sensor is presented. This capacitor was designed primarily for being used in combination with a floating-gate MOS transistor (FGMOS) as the transducer device of an accelerometer. One of the plates of this capacitance structure is fixed and the other plate will move when a force is applied, causing a variable capacitance, this is achieved by a lateral comb configuration. This variable capacitance depends either on the mechanical properties of the material used in the structure, the undesired displacement caused by gravity and pull-in effect. Furthermore, the proposed design can be fabricated using standard CMOS technologies followed by a sacrificial layer etching needed for the structure release.",

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AU - Mendoza-Acevedo, S.

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Y1 - 2013/1/1

N2 - In this paper, a capacitance structure configured with two plates to be used as a MEMS-sensor is presented. This capacitor was designed primarily for being used in combination with a floating-gate MOS transistor (FGMOS) as the transducer device of an accelerometer. One of the plates of this capacitance structure is fixed and the other plate will move when a force is applied, causing a variable capacitance, this is achieved by a lateral comb configuration. This variable capacitance depends either on the mechanical properties of the material used in the structure, the undesired displacement caused by gravity and pull-in effect. Furthermore, the proposed design can be fabricated using standard CMOS technologies followed by a sacrificial layer etching needed for the structure release.

AB - In this paper, a capacitance structure configured with two plates to be used as a MEMS-sensor is presented. This capacitor was designed primarily for being used in combination with a floating-gate MOS transistor (FGMOS) as the transducer device of an accelerometer. One of the plates of this capacitance structure is fixed and the other plate will move when a force is applied, causing a variable capacitance, this is achieved by a lateral comb configuration. This variable capacitance depends either on the mechanical properties of the material used in the structure, the undesired displacement caused by gravity and pull-in effect. Furthermore, the proposed design can be fabricated using standard CMOS technologies followed by a sacrificial layer etching needed for the structure release.

KW - Floating-gate MOS

KW - mechanical properties

KW - MEMS

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DO - 10.1109/ICEEE.2013.6676083

M3 - Artículo

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T2 - 2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013

Y2 - 30 September 2013 through 4 October 2013

ER -

MEMS capacitive sensor using FGMOS

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