MEMS capacitive sensor using FGMOS

Research output: Contribution to conferencePaperpeer-review

5 Scopus citations

Abstract

In this paper, a capacitance structure configured with two plates to be used as a MEMS-sensor is presented. This capacitor was designed primarily for being used in combination with a floating-gate MOS transistor (FGMOS) as the transducer device of an accelerometer. One of the plates of this capacitance structure is fixed and the other plate will move when a force is applied, causing a variable capacitance, this is achieved by a lateral comb configuration. This variable capacitance depends either on the mechanical properties of the material used in the structure, the undesired displacement caused by gravity and pull-in effect. Furthermore, the proposed design can be fabricated using standard CMOS technologies followed by a sacrificial layer etching needed for the structure release.

Original languageEnglish
Pages421-426
Number of pages6
DOIs
StatePublished - 1 Jan 2013
Event2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013 - Mexico City, Mexico
Duration: 30 Sep 20134 Oct 2013

Conference

Conference2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2013
Country/TerritoryMexico
CityMexico City
Period30/09/134/10/13

Keywords

  • Floating-gate MOS
  • mechanical properties
  • MEMS

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