Mechanism of crystallization of oxygen-doped amorphous Ge 1Sb2Te4 thin films

C. Rivera-Rodríguez; E. Prokhorov; G. Trapaga; E. Morales-Sánchez; M. Hernandez-Landaverde; Yu Kovalenko; J. González-Hernández

doi:10.1063/1.1756223

Mechanism of crystallization of oxygen-doped amorphous Ge ₁Sb₂Te₄ thin films

C. Rivera-Rodríguez, E. Prokhorov, G. Trapaga, E. Morales-Sánchez, M. Hernandez-Landaverde, Yu Kovalenko, J. González-Hernández

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

30 Citas (Scopus)

Resumen

The mechanisms of the amorphous-to-crystalline phase transformation in Ge₁Sb₂Te₄ alloys doped by oxygen in the range of 4-28 at.% were studied. In samples with oxygen in the range of 10-15 at.% crystallization was found to occur in two stages, producing samples where Ge₁Sb₂Te₄ and Sb₂Te₃ coexist. In the samples with higher oxygen content (in the range of 15-28 at.%), the films were found to crystallize into the rombohedral Sb₂Te ₃ phase due to the formation of amorphous germanium oxide. Three different crystallization mechanisms for materials with different content of oxygen were proposed.

Idioma original	Inglés
Páginas (desde-hasta)	1040-1046
Número de páginas	7
Publicación	Journal of Applied Physics
Volumen	96
N.º	2
DOI	https://doi.org/10.1063/1.1756223
Estado	Publicada - 15 jul. 2004
Publicado de forma externa	Sí

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@article{5b605d7f90f04c4e860fbf04fb02abb4,

title = "Mechanism of crystallization of oxygen-doped amorphous Ge 1Sb2Te4 thin films",

abstract = "The mechanisms of the amorphous-to-crystalline phase transformation in Ge1Sb2Te4 alloys doped by oxygen in the range of 4-28 at.% were studied. In samples with oxygen in the range of 10-15 at.% crystallization was found to occur in two stages, producing samples where Ge1Sb2Te4 and Sb2Te3 coexist. In the samples with higher oxygen content (in the range of 15-28 at.%), the films were found to crystallize into the rombohedral Sb2Te 3 phase due to the formation of amorphous germanium oxide. Three different crystallization mechanisms for materials with different content of oxygen were proposed.",

author = "C. Rivera-Rodr{\'i}guez and E. Prokhorov and G. Trapaga and E. Morales-S{\'a}nchez and M. Hernandez-Landaverde and Yu Kovalenko and J. Gonz{\'a}lez-Hern{\'a}ndez",

year = "2004",

month = jul,

day = "15",

doi = "10.1063/1.1756223",

language = "Ingl{\'e}s",

volume = "96",

pages = "1040--1046",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "2",

}

TY - JOUR

T1 - Mechanism of crystallization of oxygen-doped amorphous Ge 1Sb2Te4 thin films

AU - Rivera-Rodríguez, C.

AU - Prokhorov, E.

AU - Trapaga, G.

AU - Morales-Sánchez, E.

AU - Hernandez-Landaverde, M.

AU - Kovalenko, Yu

AU - González-Hernández, J.

PY - 2004/7/15

Y1 - 2004/7/15

N2 - The mechanisms of the amorphous-to-crystalline phase transformation in Ge1Sb2Te4 alloys doped by oxygen in the range of 4-28 at.% were studied. In samples with oxygen in the range of 10-15 at.% crystallization was found to occur in two stages, producing samples where Ge1Sb2Te4 and Sb2Te3 coexist. In the samples with higher oxygen content (in the range of 15-28 at.%), the films were found to crystallize into the rombohedral Sb2Te 3 phase due to the formation of amorphous germanium oxide. Three different crystallization mechanisms for materials with different content of oxygen were proposed.

AB - The mechanisms of the amorphous-to-crystalline phase transformation in Ge1Sb2Te4 alloys doped by oxygen in the range of 4-28 at.% were studied. In samples with oxygen in the range of 10-15 at.% crystallization was found to occur in two stages, producing samples where Ge1Sb2Te4 and Sb2Te3 coexist. In the samples with higher oxygen content (in the range of 15-28 at.%), the films were found to crystallize into the rombohedral Sb2Te 3 phase due to the formation of amorphous germanium oxide. Three different crystallization mechanisms for materials with different content of oxygen were proposed.

UR - http://www.scopus.com/inward/record.url?scp=3242669117&partnerID=8YFLogxK

U2 - 10.1063/1.1756223

DO - 10.1063/1.1756223

M3 - Artículo

AN - SCOPUS:3242669117

SN - 0021-8979

VL - 96

SP - 1040

EP - 1046

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -