TY - JOUR
T1 - Mechanism of crystallization of oxygen-doped amorphous Ge 1Sb2Te4 thin films
AU - Rivera-Rodríguez, C.
AU - Prokhorov, E.
AU - Trapaga, G.
AU - Morales-Sánchez, E.
AU - Hernandez-Landaverde, M.
AU - Kovalenko, Yu
AU - González-Hernández, J.
PY - 2004/7/15
Y1 - 2004/7/15
N2 - The mechanisms of the amorphous-to-crystalline phase transformation in Ge1Sb2Te4 alloys doped by oxygen in the range of 4-28 at.% were studied. In samples with oxygen in the range of 10-15 at.% crystallization was found to occur in two stages, producing samples where Ge1Sb2Te4 and Sb2Te3 coexist. In the samples with higher oxygen content (in the range of 15-28 at.%), the films were found to crystallize into the rombohedral Sb2Te 3 phase due to the formation of amorphous germanium oxide. Three different crystallization mechanisms for materials with different content of oxygen were proposed.
AB - The mechanisms of the amorphous-to-crystalline phase transformation in Ge1Sb2Te4 alloys doped by oxygen in the range of 4-28 at.% were studied. In samples with oxygen in the range of 10-15 at.% crystallization was found to occur in two stages, producing samples where Ge1Sb2Te4 and Sb2Te3 coexist. In the samples with higher oxygen content (in the range of 15-28 at.%), the films were found to crystallize into the rombohedral Sb2Te 3 phase due to the formation of amorphous germanium oxide. Three different crystallization mechanisms for materials with different content of oxygen were proposed.
UR - http://www.scopus.com/inward/record.url?scp=3242669117&partnerID=8YFLogxK
U2 - 10.1063/1.1756223
DO - 10.1063/1.1756223
M3 - Artículo
AN - SCOPUS:3242669117
SN - 0021-8979
VL - 96
SP - 1040
EP - 1046
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 2
ER -