Resumen
The excitation and emission spectra of red photoluminescence of Si wire nanostructures were studied in dependence on surface morphology and influence of magnetic field. The magnetic field of 0.5 T reduced the emission intensity by 10 % at all emission spectral range. Comparison of the two photoluminescence models - the quantum confinement and the hot carrier ballistic ones - favours the second model based on the assumption of the excitation of interface oxide defect related luminescence by hot quazi-ballistic carriers created by illumination. The effective mobility of hot electrons is estimated as 6000 cm 2/Vs, which greatly exceeds normal electron mobility (1900 cm 2V · s) in Si and thus confirms the presence of hot carrier ballistic motion.
Título traducido de la contribución | Efecto del campo magnético sobre la fotoluminiscencia visible del silicio poroso |
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Idioma original | Inglés |
Páginas (desde-hasta) | 3314-3318 |
Número de páginas | 5 |
Publicación | Physica Status Solidi C: Conferences |
Volumen | 2 |
N.º | 9 |
DOI | |
Estado | Publicada - 2005 |