Magnetic field effect on the visible photoluminescence of porous silicon

T. V. Torchynska; A. Diaz Cano; L. Y. Khomenkova; V. N. Zakharchenko; R. V. Zakharchenko; J. González-Hernández; Y. V. Vorobiev

doi:10.1002/pssc.200461152

Magnetic field effect on the visible photoluminescence of porous silicon

T. V. Torchynska, A. Diaz Cano, L. Y. Khomenkova, V. N. Zakharchenko, R. V. Zakharchenko, J. González-Hernández, Y. V. Vorobiev

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5 Scopus citations

Abstract

The excitation and emission spectra of red photoluminescence of Si wire nanostructures were studied in dependence on surface morphology and influence of magnetic field. The magnetic field of 0.5 T reduced the emission intensity by 10 % at all emission spectral range. Comparison of the two photoluminescence models - the quantum confinement and the hot carrier ballistic ones - favours the second model based on the assumption of the excitation of interface oxide defect related luminescence by hot quazi-ballistic carriers created by illumination. The effective mobility of hot electrons is estimated as 6000 cm ²/Vs, which greatly exceeds normal electron mobility (1900 cm ²V · s) in Si and thus confirms the presence of hot carrier ballistic motion.

Translated title of the contribution	Efecto del campo magnético sobre la fotoluminiscencia visible del silicio poroso
Original language	English
Pages (from-to)	3314-3318
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200461152
State	Published - 2005

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title = "Magnetic field effect on the visible photoluminescence of porous silicon",

abstract = "The excitation and emission spectra of red photoluminescence of Si wire nanostructures were studied in dependence on surface morphology and influence of magnetic field. The magnetic field of 0.5 T reduced the emission intensity by 10 % at all emission spectral range. Comparison of the two photoluminescence models - the quantum confinement and the hot carrier ballistic ones - favours the second model based on the assumption of the excitation of interface oxide defect related luminescence by hot quazi-ballistic carriers created by illumination. The effective mobility of hot electrons is estimated as 6000 cm 2/Vs, which greatly exceeds normal electron mobility (1900 cm 2V · s) in Si and thus confirms the presence of hot carrier ballistic motion.",

author = "Torchynska, {T. V.} and {Diaz Cano}, A. and Khomenkova, {L. Y.} and Zakharchenko, {V. N.} and Zakharchenko, {R. V.} and J. Gonz{\'a}lez-Hern{\'a}ndez and Vorobiev, {Y. V.}",

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doi = "10.1002/pssc.200461152",

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TY - JOUR

T1 - Magnetic field effect on the visible photoluminescence of porous silicon

AU - Torchynska, T. V.

AU - Diaz Cano, A.

AU - Khomenkova, L. Y.

AU - Zakharchenko, V. N.

AU - Zakharchenko, R. V.

AU - González-Hernández, J.

AU - Vorobiev, Y. V.

PY - 2005

Y1 - 2005

N2 - The excitation and emission spectra of red photoluminescence of Si wire nanostructures were studied in dependence on surface morphology and influence of magnetic field. The magnetic field of 0.5 T reduced the emission intensity by 10 % at all emission spectral range. Comparison of the two photoluminescence models - the quantum confinement and the hot carrier ballistic ones - favours the second model based on the assumption of the excitation of interface oxide defect related luminescence by hot quazi-ballistic carriers created by illumination. The effective mobility of hot electrons is estimated as 6000 cm 2/Vs, which greatly exceeds normal electron mobility (1900 cm 2V · s) in Si and thus confirms the presence of hot carrier ballistic motion.

AB - The excitation and emission spectra of red photoluminescence of Si wire nanostructures were studied in dependence on surface morphology and influence of magnetic field. The magnetic field of 0.5 T reduced the emission intensity by 10 % at all emission spectral range. Comparison of the two photoluminescence models - the quantum confinement and the hot carrier ballistic ones - favours the second model based on the assumption of the excitation of interface oxide defect related luminescence by hot quazi-ballistic carriers created by illumination. The effective mobility of hot electrons is estimated as 6000 cm 2/Vs, which greatly exceeds normal electron mobility (1900 cm 2V · s) in Si and thus confirms the presence of hot carrier ballistic motion.

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U2 - 10.1002/pssc.200461152

DO - 10.1002/pssc.200461152

M3 - Artículo

AN - SCOPUS:25844444526

SN - 1610-1634

VL - 2

SP - 3314

EP - 3318

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 9

ER -

Magnetic field effect on the visible photoluminescence of porous silicon

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