TY - JOUR
T1 - Low temperature photoluminescence and photoacoustic characterization of Zn-doped In x Ga 1-x As y Sb 1-y epitaxial layers for photovoltaic applications
AU - Gomez-Herrera, M. L.
AU - Herrera-Perez, J. L.
AU - Rodriguez-Fragoso, P.
AU - Riech, I.
AU - Mendoza-Alvarez, J. G.
N1 - Funding Information:
The authors are thankful for the financial support received from Conacyt-Mexico.
PY - 2008/11/30
Y1 - 2008/11/30
N2 - In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases.
AB - In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases.
KW - Liquid phase epitaxy growth
KW - Photovoltaic devices
KW - Semiconductor photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=55649113526&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2008.07.021
DO - 10.1016/j.apsusc.2008.07.021
M3 - Artículo
SN - 0169-4332
VL - 255
SP - 761
EP - 763
JO - Applied Surface Science
JF - Applied Surface Science
IS - 3
ER -